Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Florovic, M.; Škriniarová, J.; Kováč, J.; Kordoš, P.

doi:10.3390/electronics5020020

Cited by 7 publications

(6 citation statements)

References 25 publications

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“…By plotting the time constant on an Arrhenius plot, two trap energy levels are extracted at 0.62 eV and 0.87 eV, and their associated trap cross sectional areas are 8.9 10 -18 cm 2 and 1.9 10 -19 cm 2 , respectively. These values match previously reported trap levels [6], [7]. The study of traps and their effect on the sensitivity and transient behavior is important for the development of reliable and sensitive high-temperature GaN-based pressure sensors.…”

Section: Resultssupporting

confidence: 88%

TEMPERATURE-DEPENDENT TRANSIENT BEHAVIOR OF AlGaN/GaN HIGH ELECTRON MOBILITY PRESSURE SENSORS

Chapin¹,

Dowling²,

Phan³

et al. 2018

2018 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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For the first time, the time-dependent response of an AlGaN/GaN high electron mobility transistor (HEMT) pressure sensor is characterized at elevated temperatures. We show that temperature affects the sensitivity and the transient behavior of the sensor's response to pressure. At a temperature above 125°C, the drain current response after the application of pressure transitions from exponentially decaying to exponentially growing. Using an Arrhenius model of trap activation energy, we demonstrate that two traps in the AlGaN/GaN heterostructure at 0.62 eV and 0.87 eV cause the temperature-dependent transient behavior. This work paves the way for creating reliable GaN-based sensing devices.

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Section: Resultssupporting

confidence: 88%

TEMPERATURE-DEPENDENT TRANSIENT BEHAVIOR OF AlGaN/GaN HIGH ELECTRON MOBILITY PRESSURE SENSORS

Chapin¹,

Dowling²,

Phan³

et al. 2018

2018 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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“…However, their precise origin remains unclear. A study [53] explores the source of these traps. It suggests that traps within the energy range of 0.43-0.50 eV are linked to oxygen-related defects and surface imperfections within the AlGaN barrier layer.…”

Section: Cvf Analysismentioning

confidence: 99%

Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure

Nautiyal,

Pande,

Kundu

et al. 2024

Semicond. Sci. Technol.

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This article investigates the trapping mechanism in AlGaN/GaN heterostructure. For our study, the traps within the AlGaN layer are introduced at the interface and near the interface of AlGaN/GaN, in the SILVACO TCAD tool. Frequency-dependent Capacitance-Voltage (CVF) curves are obtained to study the impact of traps on device performance. From the CVF curve, it is found that the existence of interface traps introduces a shift in capacitance along the gate voltage axis. These traps introduce the threshold voltage (V_TH) shift. Furthermore, a detailed study of near-interface traps (NITs) is done based on tunneling mechanisms. For our investigation, the NITs are positioned at 0.5 nm, 1 nm, and 1.5 nm away from the AlGaN/GaN interface. The response of the NITs reduces the capacitance value in the accumulation region. The response of the NITs is explained through the capacitance charge model and border trap model. For NITs placed 0.5 nm away from the interface, the frequency dispersion in the accumulation region becomes evident. On the contrary, the dispersion reduces significantly, as the NITs goes deeper upto 1.5 nm. The results indicate that the NITs nearer to the interface respond to high frequencies. Further, the temperature dependent Capacitance-Voltage (CVT) analysis is done for both interface and near-interface traps (NITs), to understand the effect of temperature on frequency dispersion.

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“…In order to better understand the trapping mechanism, a time-dependent analysis is proposed in this section by using an Arrhenius plot. Different methods are presented into the scientific literature [14][15][16]; the study uses the method proposed in [6,17]. For this analysis, 200 V voltage stress is studied because of a more pronounced evolution, and a case temperature varying from 50 • C to 150 • C is investigated.…”

Section: Trapping Phenomena Investigationmentioning

confidence: 99%

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

et al. 2023

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In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a deep understanding of the device’s behaviour before any development of power converters. This study can ultimately be used to model observed trap effects and, thus, improve the equivalent electrical model. Using an in-house circuit and a specific experimental setup, a current-collapse phenomenon inherent to gallium nitride semiconductor is studied on planar 650 V—6 A GaN diodes by applying high voltage stresses over a wide range of temperatures. With this method, useful data on activation energy and capture cross section of electrical defects linked to dynamic RON are extracted. Finally, the origins of such defects are discussed and attributed to carbon-related defects.

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Trapping Analysis of AlGaN/GaN Schottky Diodes via Current Transient Spectroscopy

Cited by 7 publications

References 25 publications

TEMPERATURE-DEPENDENT TRANSIENT BEHAVIOR OF AlGaN/GaN HIGH ELECTRON MOBILITY PRESSURE SENSORS

TEMPERATURE-DEPENDENT TRANSIENT BEHAVIOR OF AlGaN/GaN HIGH ELECTRON MOBILITY PRESSURE SENSORS

Understanding the trap-induced frequency dispersion in the C–V curve of AlGaN/GaN hetero-structure

Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

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