2015
DOI: 10.1063/1.4922215
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Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys

Abstract: Distributed Bragg reflectors (DBRs) with peak reflectivity at approximately 280 nm, based on compositionally graded AlxGa1−xN alloys, were grown on 6H-SiC substrates by plasma-assisted molecular beam epitaxy. DBRs with square, sinusoidal, triangular, and sawtooth composition profiles were designed with the transfer matrix method. The crystal structure of these DBRs was studied with high-resolution x-ray diffraction of the (1¯015) reciprocal lattice point. The periodicity of the DBR profiles was confirmed with … Show more

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Cited by 22 publications
(10 citation statements)
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“…However, a true VCSEL requires distributed Bragg reflectors (DBRs) that are transparent and have reflectivity close to unity with sufficient bandwidth. Unfortunately, the reflectivity or bandwidth of III‐nitride DUV DBRs based on AlGaN materials has been limited due to a limited change of refractive index as a function of the Al composition .…”
Section: Introductionmentioning
confidence: 99%
“…However, a true VCSEL requires distributed Bragg reflectors (DBRs) that are transparent and have reflectivity close to unity with sufficient bandwidth. Unfortunately, the reflectivity or bandwidth of III‐nitride DUV DBRs based on AlGaN materials has been limited due to a limited change of refractive index as a function of the Al composition .…”
Section: Introductionmentioning
confidence: 99%
“…The reflectivity of current state-of-the-art III-nitride DUV DBRs is still limited to an insufficient level of $80%. 17,18 In addition, DUV surface stimulated emission (SE) from the III-nitride heterostructures needs to be demonstrated, which can be then matched to the resonant wavelength in the cavity provided by the high reflectivity DBRs. This was yet reported prior to this study.…”
Section: Onset Of Surface Stimulated Emission At 260 Nm From Algan Mumentioning
confidence: 99%
“…Использование БЗ с плавными интерфейсами в нитридных ВИЛ обсуждалось в [21] в контексте их влияния на коэффициент отражения БЗ. Однако в этом случае ситуация осложняется еще и тем, что на границах пар слоев AlGaN/GaN или AlInN/GaN, из которых обычно изготавливаются БЗ, появляются поляризационные заряды [22], которые могут существенно изменить проводимость БЗ как в позитивном, так и в негативном направлении в зависимости от знака заряда.…”
Section: Introductionunclassified