2016
DOI: 10.1002/jrs.4912
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Deep UV resonance Raman spectroscopic study on electron‐phonon coupling in hexagonal III‐nitride wide bandgap semiconductors

Abstract: Electron–phonon coupling (EPC) is an important issue in semiconductor physics because of its significant influence on the optical and electrical properties of semiconductors. In this work, the EPC in wide bandgap semiconductors including hexagonal BN and AlN was studied by deep UV resonance Raman spectroscopy. Up to fourth‐order LO phonons are observed in the resonance Raman spectrum of hexagonal AlN. By contrast, only the prominent emission band near the band‐edge and the Raman band attributed to E2g mode are… Show more

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Cited by 9 publications
(8 citation statements)
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References 38 publications
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“…In general, the magnitude of electron–phonon coupling may be defined as the extent to which distortion of the nuclei, along a vibrational coordinate, changes the energy separation between two electronic states. In our case, the electronic states are the valence and conduction bands, which are different in terms of symmetry of the wave functions for different optical transitions. , Therefore, for the same crystal with the same phonon dispersion, the electron–phonon coupling may change for different optical transitions. In our case, such a situation is observed for all five crystals.…”
Section: Resultsmentioning
confidence: 98%
“…In general, the magnitude of electron–phonon coupling may be defined as the extent to which distortion of the nuclei, along a vibrational coordinate, changes the energy separation between two electronic states. In our case, the electronic states are the valence and conduction bands, which are different in terms of symmetry of the wave functions for different optical transitions. , Therefore, for the same crystal with the same phonon dispersion, the electron–phonon coupling may change for different optical transitions. In our case, such a situation is observed for all five crystals.…”
Section: Resultsmentioning
confidence: 98%
“…1a [24][25][26][27][28][29][30][31][32][33][34], where a polarizer with fixed polarization direction was placed in the collecting optical path to ensure that the polarization direction of scattering light was strictly consistent with that of pump light. In order to avoid the influences of pump light absorption and resonance Raman scattering on the intensity of scattering light, 488-nm Ar+ gas laser was used as pump light and focused on the AlN surface through a 50× quartz lens [35][36][37][38][39]. Meanwhile, in order to smooth the Raman signal and prevent the sample from being damaged, exposure time and integration time were set to 1 s and 10 times, respectively.…”
Section: Laser Tuning In Aln Single Crystalsmentioning
confidence: 99%
“…Up to fourth‐order LO phonons were observed in the resonance Raman spectrum of hexagonal AlN. By contrast, only the prominent emission band near the band‐edge and the Raman band attributed to E2 g mode were detected for hexagonal BN with deep UV resonance excitation . Wang and co‐workers used resonance Raman to study photoinduced AgTCNQF 4 charge transfer and its electrical switching behaviour.…”
Section: Resonance Raman Spectroscopymentioning
confidence: 99%
“…By contrast, only the prominent emission band near the bandedge and the Raman band attributed to E2 g mode were detected for hexagonal BN with deep UV resonance excitation. [107] Wang and co-workers used resonance Raman to study photoinduced AgTCNQF 4 charge transfer and its electrical switching behaviour. The significance of this study lies in a deeper understanding of the electrical and optical properties of such kinds of metal-organic CT complexes and promoting applications based on light and electrical dual-control devices.…”
Section: Time-resolved and Ultrafast Raman Spectroscopymentioning
confidence: 99%