Defect and Impurity-Complex Depassivation During Electron-Beam Irradiation of GaAs

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

“…Oxygen is a common impurity in GaAs grown through a variety of methods, [51][52][53][54][55][56] including molecular beam epitaxy (MBE) and metal-organic chemical-vapor-deposition (MOCVD). Recently, the O As defect was proposed 29 as a possible contaminant-related defect in GaAs based on reanalysis of thermal generation rate studies on p-i-n-i-p GaAs structures grown by molecular beam epitaxy. 57,58 In Ref.…”

“…The relevant density-functional-theory calculations utilize the same base parameters as in Ref. 29. For AlGaAs, a quarter of the Ga atoms were substituted with Al in a checkboard pattern at a lattice constant of 5.65 Å.…”

“…A strongly nonuniform defect-energy dependence is observed, consistent with studies of the low-frequency noise of GaN/AlGaN HEMTs. 12,16,26,29 In practice, these effective energies include transitions between a trap and the proximal energy band, or the energy required to reconfigure a defect between charge states on opposite sides of the Fermi energy. 16,[29][30][31][32] The most prominent peak in Fig.…”

“…12,16,26,29 In practice, these effective energies include transitions between a trap and the proximal energy band, or the energy required to reconfigure a defect between charge states on opposite sides of the Fermi energy. 16,[29][30][31][32] The most prominent peak in Fig. 9 is located at ∼290 K with E o ≈ E act ≈ 0.51 eV.…”