Defect characterization and numerical modelling of single-crystal ultra-pure intrinsic diamond

Mohapatra, Sangram Keshori; Sahu, P. K.; Rath, S.; Murty, N. V. L. Narasimha

doi:10.1016/j.diamond.2020.107822

Cited by 8 publications

(4 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The electronic grade diamond samples supplied by Element 6 have very low concentration of unintentional dopants such as B and N in concentrations below 5 ppb resulting in high resistivity samples with low defect densities. Our earlier study on thermally stimulated current (TSC) spectra of electronic-grade diamond sample confirms low-defect densities [26]. The resulting charge collection distance and efficiency reach the maximum values even at low-electric fields.…”

Section: Alpha Particle Spectroscopy and Irradiation Effectsmentioning

confidence: 58%

“…The 𝜇𝜏 product of holes is higher in comparison to that of electrons in the SC-diamond detector. This can be attributed to the high density of electron traps compared to hole traps, as reported by Mohapatra et al [26]. In the case of 4H-SiC detector, the 𝜇𝜏 products are estimated to be (𝜇𝜏) 𝑒 ∼ 6.7 × 10 −7 cm 2 /V and (𝜇𝜏) ℎ ∼ 6 × 10 −8 cm 2 /V.…”

Section: Alpha Particle Spectroscopy and Irradiation Effectsmentioning

confidence: 61%

“…The poorer resolution of HPSI SiC detector may be due to charge trapping effects by intrinsic defects in HPSI SiC [9,13] leading to smaller μτ (mobility and carrier lifetime) product resulting in incomplete charge collection (discussed later). On the other hand, the superior charge transport properties of intrinsic diamond, coupled with the better material quality with minimal defect density [26] leads to complete charge collection even at lower electric fields. It is evident that SC-diamond bulk detectors are better suited for high resolution alpha spectroscopy compared to 4H-SiC HPSI detectors of comparable bulk thickness.…”

Section: Alpha Particle Spectroscopy and Irradiation Effectsmentioning

confidence: 99%

See 2 more Smart Citations

Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy

et al. 2021

View full text Add to dashboard Cite

In this work, the fabrication, electrical characterization and alpha spectral characterization of single-crystal (SC) diamond bulk radiation detector have been carried out. The performance metrics of the SC-diamond bulk detector such as the leakage current density, charge collection efficiency, spectral resolution and polarization effects are studied and are compared with a bulk detector fabricated using High-Pure Semi-Insulating (HPSI) 4H-SiC. It is found that the SC-diamond detector exhibits lower leakage current density, higher μτ product, better spectral resolution and no polarization effects in comparison to the HPSI 4H-SiC detector. The time response analysis of the SC-diamond detector is carried out to study the effect of alpha particles on the operation of the SC-diamond detector. Accordingly, the stability of the SC-diamond detector is tested by evaluating the total counts versus real time and the performance of the diamond detector is found to be stable during the alpha-time spectroscopy. Hence, diamond bulk detectors using commercially available electronic grade diamond may be better suited for alpha particle spectroscopy compared to HPSI 4H-SiC of nearly equivalent thickness.

show abstract

Section: Alpha Particle Spectroscopy and Irradiation Effectsmentioning

confidence: 58%

Section: Alpha Particle Spectroscopy and Irradiation Effectsmentioning

confidence: 61%

Section: Alpha Particle Spectroscopy and Irradiation Effectsmentioning

confidence: 99%

See 1 more Smart Citation

Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Consequently, Sentaurus TCAD is a robust semiconductor device simulation tool that is wellsuited for modeling of a semiconductor based electronics device and is chosen for the task (Mohapatra et al, 2020;Nabil et al, 2020).…”

Section: Introductionmentioning

confidence: 99%

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

Garba,

Nasiru,

Abubakar

et al. 2024

dujopas

View full text Add to dashboard Cite

This paper gives an insight into the need for radiation detection and the most commonly flexible and efficient radiation detector. It also examines bulk characteristics of 4H-SiC semiconductor radiation detector with Ni and Ti as metals for the contact. Bulk characterization of the device, including: doping concentration, electrons and holes behaviors, space charge and current densities were carried out. The modeling is conducted using Sentaurus Technology Computer Aided Design (TCAD) to examine charge transport in bulk 4HSiC material. Data obtained were further analyzed through Sentaurus visual, sentaurus Techplot and Excel to clearly determine the characteristics of the device. It is observed that when the semiconductor and metal are in contact, the Fermi-level is established where the doping concentration varied with either magnitude of the doping concentration or nature of the dopant. Similarly, Schottky and ohmic contacts and temperature effect were observed from the device characteristics which demonstrate that, the detector can withstand a temperature from the range of 100K to 700K in no fluctuating state.

show abstract

Analysis method of diamond dislocation vectors using reflectance mode X-ray topography

Shikata

Miyajima

Akashi

2021

Diamond and Related Materials

View full text Add to dashboard Cite

Defect characterization and numerical modelling of single-crystal ultra-pure intrinsic diamond

Cited by 8 publications

References 37 publications

Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy

Comparative study of Single Crystal (SC)-Diamond and 4H-SiC bulk radiation detectors for room temperature alpha spectroscopy

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

Analysis method of diamond dislocation vectors using reflectance mode X-ray topography

Contact Info

Product

Resources

About