Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE

Sembian, A.M; Konuma, M.; Silier, I.; Gutjahr, A.; Rollbühler, Nicola; Banhart, Florian; Babu, S. Moorthy; Ramasamy, P.

doi:10.1016/s0040-6090(98)01306-6

Cited by 10 publications

(6 citation statements)

References 19 publications

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“…2, the threshold supersaturation required for LPE growth with the Na flux method is about 30%, which is supersaturation far higher than that in LPE growth with SiGe, GaAs, InP, and so on [14][15][16][17][18]. The supersaturation in the Na flux system is considered as the gap between the nitrogen concentration in the Na-Ga melt and the minimum nitrogen concentration required for the growth of GaN [19].…”

Section: The Relationship Between the Growth Rate Of Lpe Film And Supmentioning

confidence: 99%

“…We previously applied the liquid phase epitaxy (LPE) technique to the Na flux method and reported that a large GaN single crystal with low dislocation density could be grown [12,13]. It is well known that the dislocation density in the crystal grown by the LPE technique varies with supersaturation in other compound semiconductors, such as SiGe, GaAs, InP, and so on [14][15][16][17][18]. In the case of growth of GaN using the Na flux method, an examination of the relationship between supersaturation and dislocation density is essential.…”

Section: Introductionmentioning

confidence: 99%

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The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

Morishita

Kawamura

Kawahara

et al. 2004

Journal of Crystal Growth

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Section: The Relationship Between the Growth Rate Of Lpe Film And Supmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

Morishita

Kawamura

Kawahara

et al. 2004

Journal of Crystal Growth

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“…According to Sembian et al . 25 , the pyramidal growth is the result when the Ge concentration increases beyond 13%. Three-dimensional nucleation and growth have been suggested to be associated with the lattice mismatch between the grown layer and the substrate (lattice mismatch for Si/Ge = 4.2%) as well 18 .…”

Section: Resultsmentioning

confidence: 99%

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications

Chang

2019

Sci Rep

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Based on recent works, the most desirable high-temperature thermoelectric material would be highly-doped Si1−xGex crystals or films with sufficiently high Ge concentrations so that simultaneous enhancing the power factor and wave-engineering of phonons could be possible on the ballistic thermal conductor. However, available thin film deposition methods such as metal organic chemical vapor deposition, electron-beam evaporation, or sputtering are unable to produce highly-doped SiGe single crystals or thick films of high quality. To fabricate the desired material, we here employ liquid phase epitaxy to make highly-doped (up to 2% GaP doping) SiGe crystals with minimized concentration variations on Si (111) and (100) substrates. We find that growing Si1−xGex (x = 0.05~0.25) crystals from Ga solvents at relatively high vacuum pressure (0.1 torr) displays significant deviations from previous calculated phase diagram. Moreover, doping GaP into SiGe is found to affect the solubility of the system but not the resulting Ge concentration. We thus plot a new pressure-dependent phase diagram. We further demonstrate that the new pressure-induced liquid phase epitaxy technique can yield Si1−xGex crystals of much higher Ge concentrations (x > 0.8) than those grown by the conventional method.

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“…20) SiGe layers of 25-30 μm have been grown using slide boats, and defects have been minimized by controlling the LPE process. [21][22][23] However, obtaining bulk crystals and layers of SiGe with these conventional LPE processes requires a large furnace and special equipment for the LPE method and heating. Therefore, there is a need for another SiGe fabrication method that utilizes a low-cost, simple, and fast process.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing ambient on SiGe layer formation using Al–Ge paste for III–V solar cell application

Matsubara

Minamiyama

Dhamrin

et al. 2023

Jpn. J. Appl. Phys.

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A mixed paste of aluminum (Al) and germanium (Ge) (7:3) was prepared and screen-printed on silicon (Si) substrates, followed by annealing at a peak temperature of 1000 °C in an infrared rapid thermal annealing furnace to investigate the liquid-phase growth of silicon-germanium (SiGe) epitaxial layers. The gas ambient during annealing was changed to investigate the effect on SiGe layer quality and physical properties. The SiGe-formed samples were observed by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). Oxygen-containing atmosphere suppressed the SiGe layer formation by oxidizing the Al particle surface limiting the reaction of the particle to the Si surface. On the other hand, annealing in an argon atmosphere without oxygen resulted in the formation of SiGe layers with a thickness of over 30 μm.

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Defect distribution and morphology development of SiGe layers grown on Si(100) substrates by LPE

Cited by 10 publications

References 19 publications

The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method

Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications

Effect of annealing ambient on SiGe layer formation using Al–Ge paste for III–V solar cell application

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