Defect distribution in InGaAsN/GaAs multilayer solar cells

Kósa, A.; Stuchlíková, Ł.; Harmatha, L.; Mikolášek, Miroslav; Kováč, J.; Ściana, B.; Dawidowski, Wojciech; Radziewicz, D.; Tłaczała, M.

doi:10.1016/j.solener.2016.03.057

Cited by 20 publications

(14 citation statements)

References 15 publications

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“…Therefore, the growth of dilute nitrides has been scarcely studied in an atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) [10,11], which is a challenge for growers, but allows the reduction of the production cost of MJSCs based on these metastable compounds. Our earlier experiments [12][13][14][15] indicated a high In/N composition ratio (10 ÷ 30) in InGaAsN alloys grown by AP-MOVPE. Consequently it was impossible to obtain thick (~ 1 µm) layers with good material quality.…”

Section: Introductionmentioning

confidence: 82%

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Ściana

Radziewicz

Dawidowski

et al. 2019

J Mater Sci: Mater Electron

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This work presents the epitaxial growth and material properties of InGaAsN epilayers obtained by atmospheric pressure metal organic vapour phase epitaxy. The main goal was to obtain InGaAsN quaternary alloys lattice-matched to GaAs in order to apply them as an intrinsic thick absorber in p-i-n solar cells. It allows improvement of their photovoltaic parameters (e.g. short circuit current, open circuit voltage) by reducing the density of misfit dislocations. To overcome the main difficulties connected with achieving InGaAsN composition with In/N ratio of ~ 3, which guarantees a lattice matching to GaAs, epitaxial processes were carried out with different concentration of gallium source in the gas phase. Diffraction curves, measured using HRXRD, indicated that the main aim of this work was achieved for the gas molar ratio Ga/(Ga + In) = 0.935. The optical quality and surface morphology of the investigated structures examined by PL, CER and AFM methods are also presented and discussed.Publisher's Note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

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Section: Introductionmentioning

confidence: 82%

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Ściana

Radziewicz

Dawidowski

et al. 2019

J Mater Sci: Mater Electron

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“…Dilute nitride semiconductors alloys, i.e., arsenides, phosphides or antimonides, with the addition of a small amount of nitrogen, are an attractive material for both laser [1][2][3] and photovoltaic [4][5][6][7][8][9][10][11] communities. A nitrogen atom with a high electronegativity of 3.04, according to the Pauling scale, induces an impurity level close to the conduction band of the matrix material.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

et al. 2021

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Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation.

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“…[23] Study of defect distribution in InGaAsN/GaAs multilayer solar cells indicated that all structures showed a variety of deep energy levels with high concentrations and the electron trap state associates with a defect containing two nitrogen atoms on the lattice site. [24] Based on the literatures, it was found that the effects of InÀ N distribution on electronic properties of InGaAsN under high pressure are still ambiguous and need further investigation. In this report, we therefore study the effects of InÀ N interaction in In x Ga 1-x As 0.963 N 0.037 with the concentrations of x = 0.074, 0.111 and 0.148, which relate to the ratio in experiments (In : N = 1 : 0.35 � 3 : 1).…”

Section: Introductionmentioning

confidence: 99%

“…The p‐i‐n structures of GaAs/InGaAsN were grown on Ge substrate by low‐pressure MOVPE and it was found that the photo‐current edge of InGaAsN (In=10.3 % and N=3.3 %) with 1 eV bandgap shifted to longer wavelength . Study of defect distribution in InGaAsN/GaAs multilayer solar cells indicated that all structures showed a variety of deep energy levels with high concentrations and the electron trap state associates with a defect containing two nitrogen atoms on the lattice site …”

Section: Introductionmentioning

confidence: 99%

Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

et al. 2019

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We present the effects of In−N distribution and high pressure on the zincblende phase (0–5 GPa) of In x Ga 1− x As 0.963 N 0.037 ( x =0.074, 0.111 and 0.148). Structural, electronic, and optical properties are analyzed, and it is found that non‐isotropic distribution of In−N (type C) possesses the minimum free energy for the InGaAsN conventional cell system. An increasing indium content reduces the formation enthalpy of InGaAsN. The formation enthalpy, conduction band minimum, strength of covalent bonds, and electron density differences in free space of InGaAsN are decreased under high‐pressure conditions. The dielectric performance and static permittivity of InGaAsN are lower than that of GaAs, for which the dielectric performance transforms to conductor performance at high frequency. The optimum photoabsorption coefficient is found at the composition of In 0.111 Ga 0.889 As 0.963 N 0.037 (3In−N), which very well relates to the literature.

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Defect distribution in InGaAsN/GaAs multilayer solar cells

Cited by 20 publications

References 15 publications

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

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