Defect Dynamics in Self-Catalyzed III–V Semiconductor Nanowires

Gott, James A.; Beanland, Richard; Fonseka, H. Aruni; Peters, Jonathan J. P.; Zhang, Yunyan; Liu, Huiyun; Sanchez, Ana M.

doi:10.1021/acs.nanolett.9b01508

Cited by 7 publications

(5 citation statements)

References 32 publications

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“…Recently, in situ heating experiments in the TEM have been realized to estimate activation energies of various phenomena in III−V NWs, such as GaAs replacement by Au 52,53 or defect dynamics. 54 The same method has been applied here to extract the activation energy of the present As desorption mechanism. From 300 to 380 °C, the diameter D of the NW was measured to calculate the corresponding arsenic desorption velocity k (see the Supporting Information for details concerning the data measurement).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…At around 365 °C, the As shell is not visible anymore and the GaAs surface is clean and smooth. Recently, in situ heating experiments in the TEM have been realized to estimate activation energies of various phenomena in III–V NWs, such as GaAs replacement by Au , or defect dynamics . The same method has been applied here to extract the activation energy of the present As desorption mechanism.…”

Section: Resultsmentioning

confidence: 99%

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Insights into the Arsenic Shell Decapping Mechanisms in As/GaAs Nanowires by X-ray and Electron Microscopy

et al. 2021

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Nanowire heterostructures of the oxide (shell)–semiconducting (core) type are of interest for various applications in energy harvesting, such as electrodes for photocatalysis and in sensors. Their complete synthesis often requires the deposition of the shell and the core in two separate reactors, with the risk of exposing the core to oxidation from atmospheric conditions during transfer. Here, we study the desorption mechanisms and protection efficiency of an arsenic shell, which was purposely deposited on the GaAs core for protection against undesirable oxidation. Using in situ heating in transmission electron microscopy and synchrotron radiation scanning photoelectron microscopy, we explore the morphology, structure, and surface chemistry of GaAs nanowires capped with an arsenic shell, from room temperature to 500 °C. A phase transformation from amorphous to polycrystalline arsenic is evidenced at a temperature of about 300 °C, alongside the disappearance of the surface oxidation observed at room temperature. At higher temperatures, the arsenic shell desorbs with an activation energy of 2.32 eV, leading to clean facets. These results are helpful to determine pathways toward improving the efficiency of oxidation-protective layers on III–V semiconducting nanostructures.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Insights into the Arsenic Shell Decapping Mechanisms in As/GaAs Nanowires by X-ray and Electron Microscopy

et al. 2021

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“…III–V semiconductor NWs have received considerable interest for their applications in optoelectronics. They are usually fabricated by metal-assisted vapor–liquid-soild (VLS) mechanism, which was proposed by Wagner in 1964. − In general, the VLS growth process occurs by dissolution of semiconductor precursor species or derivatives in a liquid metal-based catalyst, followed by the crystallization of the solid semiconductor after the liquid becomes supersaturated . This process includes the formation of a nucleus with critical size at the liquid–solid interface and follows a layer-by-layer growth across this interface. , In 2018, Filler and Ek summarized the atomic-scale study of VLS NW growth, highlighting the impact of the solid surface passivation, truncation of the growth of the solid facet, compositional segregation in liquid metal catalysts, the droplet phase stability and wetting stability on the VLS NW growth …”

Section: Metal Compoundsmentioning

confidence: 99%

In Situ Kinetic Observations on Crystal Nucleation and Growth

Deepak

2022

Chem. Rev.

152

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Nucleation and growth are critical steps in crystallization, which plays an important role in determining crystal structure, size, morphology, and purity. Therefore, understanding the mechanisms of nucleation and growth is crucial to realize the controllable fabrication of crystalline products with desired and reproducible properties. Based on classical models, the initial crystal nucleus is formed by the spontaneous aggregation of ions, atoms, or molecules, and crystal growth is dependent on the monomer’s diffusion and the surface reaction. Recently, numerous in situ investigations on crystallization dynamics have uncovered the existence of nonclassical mechanisms. This review provides a summary and highlights the in situ studies of crystal nucleation and growth, with a particular emphasis on the state-of-the-art research progress since the year 2016, and includes technological advances, atomic-scale observations, substrate- and temperature-dependent nucleation and growth, and the progress achieved in the various materials: metals, alloys, metallic compounds, colloids, and proteins. Finally, the forthcoming opportunities and challenges in this fascinating field are discussed.

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“…Within this context, in situ heating has shown the effectiveness of post-growth annealing for twining reduction in GaAsP NWs since the defects tend to recombine or migrate towards the NW surface. Thus, careful inspection while heating enables one to track the motion of null Burgers vector line defects—twin boundaries (see Figure 6 b)—thermodynamically unstable within NWs, with activation energies similar to that of glide dislocations [ 90 ]. The formation of twin boundaries has been reported in other semiconductor material systems, such as MoS 2 grown on suspended graphene by thermolysis, where twin boundaries are created as consequence of the reknitting process to fill holes between neighbor MoS 2 clusters (see Figure 6 c) [ 91 ].…”

Section: In Situ Stemmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

STEM Tools for Semiconductor Characterization: Beyond High-Resolution Imaging

Mata

Molina

2022

Nanomaterials

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The smart engineering of novel semiconductor devices relies on the development of optimized functional materials suitable for the design of improved systems with advanced capabilities aside from better efficiencies. Thereby, the characterization of those materials at the highest level attainable is crucial for leading a proper understanding of their working principle. Due to the striking effect of atomic features on the behavior of semiconductor quantum- and nanostructures, scanning transmission electron microscopy (STEM) tools have been broadly employed for their characterization. Indeed, STEM provides a manifold characterization tool achieving insights on, not only the atomic structure and chemical composition of the analyzed materials, but also probing internal electric fields, plasmonic oscillations, light emission, band gap determination, electric field measurements, and many other properties. The emergence of new detectors and novel instrumental designs allowing the simultaneous collection of several signals render the perfect playground for the development of highly customized experiments specifically designed for the required analyses. This paper presents some of the most useful STEM techniques and several strategies and methodologies applied to address the specific analysis on semiconductors. STEM imaging, spectroscopies, 4D-STEM (in particular DPC), and in situ STEM are summarized, showing their potential use for the characterization of semiconductor nanostructured materials through recent reported studies.

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Defect Dynamics in Self-Catalyzed III–V Semiconductor Nanowires

Abstract: Please refer to published version for the most recent bibliographic citation information. If a published version is known of, the repository item page linked to above, will contain details on accessing it.

Cited by 7 publications

References 32 publications

Insights into the Arsenic Shell Decapping Mechanisms in As/GaAs Nanowires by X-ray and Electron Microscopy

Insights into the Arsenic Shell Decapping Mechanisms in As/GaAs Nanowires by X-ray and Electron Microscopy

In Situ Kinetic Observations on Crystal Nucleation and Growth

STEM Tools for Semiconductor Characterization: Beyond High-Resolution Imaging

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