Defect dynamics in two-dimensional black phosphorus under argon ion irradiation

Gupta, Saransh; Periasamy, Prakash; Narayanan, Badri

doi:10.1039/d1nr00567g

Cited by 10 publications

(7 citation statements)

References 85 publications

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“…43 The drifting of Se vacancies induced by irradiation contributes to the modulation of the interfacial barrier between the GeSe nanosheet and electrodes. 44,45 When a certain voltage is applied, the migration of vacancies causes a change in the potential barrier at the interface between GeSe and the electrodes, providing an opportunity to mimic biological synaptic behaviors. 16,17 As shown in Figure 5, synaptic plasticity of the device was demonstrated in detail and the particulars of the device was displayed in Figure S11.…”

Section: Resultsmentioning

confidence: 99%

Low operating voltage memtransistors based on ion bombarded p‐type GeSe nanosheets for artificial synapse applications

Wang,

He,

Chen

et al. 2023

InfoMat

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Two‐dimensional (2D) layered materials have many potential applications in memristors owing to their unique atomic structures and electronic properties. Memristors can overcome the in‐memory bottleneck for use in brain‐like neuromorphic computing. However, exploiting additional lateral memtransistors based on 2D layered materials remains challenging. There are few studies on p‐type semiconductors that have not been theoretically analyzed. In this study, a lateral memtransistor based on p‐type GeSe nanosheets is investigated. A three‐terminal GeSe memtransistor that modulated the interfacial barrier height was fabricated using low‐energy ion irradiation; the memtransistor exhibited a low operating voltage. The memtransistor successfully mimics biological synapse, including neuroplasticity functions, such as short‐term plasticity, long‐term plasticity, paired‐pulse facilitation, and spike‐timing‐dependent plasticity. The mechanism of interfacial modulation was verified by experimental results and theoretical calculations. The results show that it is feasible to modulate the interface of 2D GeSe nanosheets using low‐energy ion irradiation to realize a lateral memtransistor. This may provide promising opportunities for artificial neuromorphic system applications based on 2D layered materials.image

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Section: Resultsmentioning

confidence: 99%

Low operating voltage memtransistors based on ion bombarded p‐type GeSe nanosheets for artificial synapse applications

Wang,

He,

Chen

et al. 2023

InfoMat

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“…For He, the number of atoms displaced from the top layers in ZLG, MLG, and BLG systems decreases with increasing ion energies. Such a behavior is typical for 2D materials including graphene, [ 51 ] h‐BN [ 52,53 ] , MoS 2 [ 31,33 ] , and black phosphorus [ 54 ] sheets. The reason for the drop in the number of defects has been discussed previously at length, see Ref.…”

Section: Resultsmentioning

confidence: 99%

Atomistic Simulations of Defects Production under Ion Irradiation in Epitaxial Graphene on SiC

Jain

Kretschmer

Höflich

et al. 2022

Physica Rapid Research Ltrs

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Using first-principles and analytical potential atomistic simulations, production of defects in epitaxial graphene (EG) on SiC upon ion irradiation for ion types and energies accessible in helium-ion microscope is studied. Graphene-SiC systems consisting of the buffer (zero) graphene layer and SiC substrate, as well as one (monolayer) and two (bilayer) additional graphene layers, are focused on. The probabilities for single, double, and more complex vacancies to appear upon impacts of energetic ions in each graphene layer as functions of He-and Ne-ion energies are calculated and the data are compared with those obtained for freestanding graphene. The results indicate that the role of the substrate is minimal for He-ion irradiation with energies above 5 keV, which can be associated with a low sputtering yield from this system upon ion irradiation, as compared with the common Si/SiO 2 substrate. In contrast, SiC substrate has a significant effect on defect production upon Ne-ion irradiation. The results can serve as a guide to the experiments on ion irradiation of EG to choose the optimum ion beam parameters for defect-mediated engineering of such systems, for example, for creating nucleation centers to grow other 2D materials, such as h-BN, on top of the irradiated EG.

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“…Vacancies have resulted from vacant lattice positions owing to missing its constituent atoms. 273 Various methods, such as high energy beams, 274 chemical treatments, 275 and physical-mechanical 276 approaches, can be applied to introduce these defects into 2D materials. Among them, the induced mechanical force to create defective sites via ball milling is a convenient and industrial method.…”

Section: Bn Defect Engineering To Tailor Co 2 Adsorption and Conversionmentioning

confidence: 99%

A review of boron nitride-based photocatalysts for carbon dioxide reduction

et al. 2023

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Defect dynamics in two-dimensional black phosphorus under argon ion irradiation

Abstract: Classical molecular dynamics simulations show that production, accumulation, and evolution of defects in monolayer phosphorene can be precisely controlled by varying fluence of noble gas ion radiation.

Cited by 10 publications

References 85 publications

Low operating voltage memtransistors based on ion bombarded p‐type GeSe nanosheets for artificial synapse applications

Low operating voltage memtransistors based on ion bombarded p‐type GeSe nanosheets for artificial synapse applications

Atomistic Simulations of Defects Production under Ion Irradiation in Epitaxial Graphene on SiC

A review of boron nitride-based photocatalysts for carbon dioxide reduction

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