Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

Zhu, Min; Du, Zehui; Ma, Jan

doi:10.1063/1.3664137

Cited by 8 publications

(3 citation statements)

References 25 publications

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“…At first sight it is therefore surprising that a Zr rich surface oxide shows a distinct core level binding energy with respect to that of Zr in PZT. However, the XPS data in the literature shows that the Zr binding energy is (181.4 ±0.1) eV in PZT [10,24,35,32,36,37,38,39,40,41,42,43,44,45,46] and (182.4 ±0.3) eV in ZrO 2 [47,48,49,50,51,52,53,54,55,56], in excellent agreement with the 1 eV shift measured here. Beyond the immediate chemical environment of the Zr emitter, two other effects may influence the BE shift.…”

Section: Discussionsupporting

confidence: 90%

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

Gueye

Rhun

Gergaud

et al. 2016

Applied Surface Science

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We present a study of the chemistry of the nanostructured phase at the surface of lead zirconium titanate PbZr 0.52 Ti 0.48 O 3 (PZT) films synthesized by sol-gel method. In sol-gel synthesis, excess lead precursor is used to maintain the target stoichiometry. Surface nanostructures appear at 10% excess lead precursor whereas 30% excess precursor inhibits their formation. Using the surface-sensitive, quantitative X-ray photoelectron spectroscopy and glancing angle X-ray diffraction we have shown that the chemical composition of the nanostructures is ZrO 1.82−1.89 rather than pyrochlore often described in the literature. The presence of a possibly discontinuous layer of wide band gap ZrO 1.82−1.89 could be of importance in determining the electrical properties of PZT-based metal-insulator-metal heterostructures.

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Section: Discussionsupporting

confidence: 90%

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

Gueye

Rhun

Gergaud

et al. 2016

Applied Surface Science

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“…Oscillating transmittance spectra were observed for 200 nm and 400 nm films, suggesting that they have a flat surface and a uniform thickness. [37][38][39] It was also observed that the number of oscillations decreases with decrease of film thickness. Optical absorption edge was observed at wavelength $300-350 nm (see Fig.…”

Section: Optical Characterizationmentioning

confidence: 73%

Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Kumari

Ortega

Pradhan

et al. 2015

Journal of Applied Physics

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(PZTNi30) thin films for various thicknesses, ranging from 5 nm to 400 nm, were fabricated by pulsed laser deposition technique. Giant dielectric dispersion, low dielectric loss, large dielectric constant $1000-1500 from 100 Hz to 100 kHz, and diffused dielectric anomaly near 570-630 K were observed in PZTNi30 thin films. These films show well saturated ferroelectric hysteresis, with large remanent polarization. It also illustrated excellent optical transparency which decreased from 82 to 72% with increasing film thickness from 5 nm to 400 nm for the probe wavelengths ranging from 200 to 1100 nm. A decrease in direct bandgap (E g ) values from 4 eV to 3.4 eV and indirect-E g values from 3.5 eV to 2.9 eV were observed for PZTNi30 thin films with increase in film thickness from 5 nm to 400 nm, respectively. The direct and indirect bandgaps were discussed in context of film thickness and grain size effects. Our investigations on optical properties of PZTNi30 thin films suggest that bandgap can be modified as a function of film thickness which may be useful for readers working to develop novel candidates for ferroelectric photovoltaic. V C 2015 AIP Publishing LLC.

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“…Due to that properties, PZT is important and commonly used material in the fields of microsystems and microelectronics [1,2] . The PZT thin films have been regarded widely as ferroelectric random access memories, nonvolatile memory devices, and dynamic access memories because of their stability as operating in devices and their remarkable ferroelectric properties [3][4][5][6] .…”

Section: Introductionmentioning

confidence: 99%

Investigation of Post Annealing Effect on the PZT Thin Films

Choi¹,

Park²,

Koh³

2015

Journal of the Chosun Natural Science

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The PZT thin films were deposited on Si(100) substrate using RF magnetron sputtering method. And the PZT thin films were post annealed at various temperatures to form perovskite phase. To analyze PZT thin films, surface profiler, XRD, XPS, CA, and SFE were used. The thickness increased from 536.5 to 833.2 nm as post annealing temperature increased. The perovskite PZT was observed from PZT-823 and pyrochlore PZT, ZrO 2 , TiO 2 , and perovskite PbZrO 3 were observed. From the XPS, the atomic percentages of Pb, Zr, Ti, and O were calculated and the portion of Pb increased to PZT-823 and decreased to PZT-923 and then increased to PZT-1023. Also, the CA and SFE was effected on post annealing temperature and as a function of atomic percentage of Pb, the CA and SFE was transformed.

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Defect enhanced optic and electro-optic properties of lead zirconate titanate thin films

Cited by 8 publications

References 25 publications

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

Chemistry of surface nanostructures in lead precursor-rich PbZr0.52Ti0.48O3 sol–gel films

Effect of thickness on dielectric, ferroelectric, and optical properties of Ni substituted Pb(Zr0.2Ti0.8)O3 thin films

Investigation of Post Annealing Effect on the PZT Thin Films

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