Defect evolution and dopant activation in laser annealed Si and Ge

Cristiano, Fuccio; Shayesteh, Maryam; Duffy, Ray; Huet, Karim; Mazzamuto, Fulvio; Qiu, Yang; Quillec, M.; Henrichsen, Henrik Hartmann; Nielsen, Peter Brønnum; Petersen, Dirch Hjorth; Magna, Antonino La; Caruso, Giuseppe; Boninelli, Simona

doi:10.1016/j.mssp.2015.09.011

Cited by 38 publications

(17 citation statements)

References 38 publications

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“…Thus, the merging of highly mobile I-agglomerates leads to the formation of large I-clusters within nanoseconds, contrary to OR mechanism that would require times of the order of seconds to exchange single-Is among stable and immobile I-clusters. It is worth to note that the density and diameter of {001} loops extracted from experiments [25,45] are comparable to the results obtained in our simulations, which give an average distance among {001} loops of 10 nm and sizes of hundreds of Is (values derived from data in Table 1).…”

Section: Resultssupporting

confidence: 84%

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{001} loops in silicon unraveled

et al. 2019

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By using classical molecular dynamics simulations and a novel technique to identify defects based on the calculation of atomic strain, we have elucidated the detailed mechanisms leading to the anomalous generation and growth of {001} loops found after ultra-fast laser annealing of ion-implanted Si. We show that the building block of the {001} loops is the very stable Arai tetra-interstitial [N. Arai, S. Takeda, M. Kohyama, Phys. Rev. Lett. 78, 4265 (1997)], but their growth is kinetically prevented within conventional Ostwald ripening mechanisms under standard processing conditions. However, our simulations predict that at temperatures close to the Si melting point, Arai tetra-interstitials directly nucleate at the boundaries of fast diffusing selfinterstitial agglomerates, which merge by a coalescence mechanism reaching large sizes in the nanosecond timescale. We demonstrate that the crystallization of such agglomerates into {001} loops and their subsequent growth is mediated by the tensile and compressive strain fields that develop concurrently around the loops. We also show that further annealing produces the unfaulting of {001} loops into perfect dislocations. Besides, from the simulations we have fully characterized the {001} loops, determining their atomic structure, interstitial density and formation energy.

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Section: Resultssupporting

confidence: 84%

“…decreases, in very good agreement with experimental observations[25,45]. Extracted formation energies per I atom decrease with temperature, because {001} loops become larger and the contribution of the interfacial energy diminishes.…”

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confidence: 89%

{001} loops in silicon unraveled

et al. 2019

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“…As a consequence, the annealing process timescale becomes shorter and shorter [3,4]. Nanosecond Laser Annealing (NLA), which enables to reach higher dopants activation in Si [5][6][7] or Ge [8,9], is very promising from that point of view. Ultraviolet NLA (UV-NLA) can also be used for 3D Integration, as its short pulse duration and its short wavelength result in high anneal temperatures near the surface while keeping embedded layers at much lower temperatures [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers

Dagault

Kerdilès

Alba

et al. 2020

Applied Surface Science

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30 nm-thick pseudomorphic Si1-xGex layers with Ge concentrations x ranging from 0 to 0.4 were submitted to Ultraviolet Nanosecond Laser Annealing (UV-NLA). The impact of UV-NLA on the various regimes and on the layer crystallinity was assessed for each Ge concentration. This study highlighted the existence of four annealing regimes, with notably a surface melt regime with isolated molten islands on the surface. The strain in the layer depended on the liquid/solid interface roughness and on the stored elastic energy in the layers. In the case of smooth liquid/solid interfaces, a limit for perfect recrystallization was estimated near 750 mJ/m².

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“…Laser annealing is used for Si and Ge to achieve highly doped and abrupt junctions. 9 Additionally, annealing in forming gas (FG) has been used to reduce fixed oxide charges and interface states at the Al 2 O 3 /InGaAs interface. 10 Similarly, for 2D-semiconductors, several publications have shown how different annealing steps can improve the performances of TMD-based devices.…”

Section: Introductionmentioning

confidence: 99%

Effects of Annealing Temperature and Ambient on Metal/PtSe₂ Contact Alloy Formation

et al. 2019

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Forming gas annealing is a common process step used to improve the performance of devices based on transition-metal dichalcogenides (TMDs). Here, the impact of forming gas anneal is investigated for PtSe2-based devices. A range of annealing temperatures (150, 250, and 350 °C) were used both in inert (0/100% H2/N2) and forming gas (5/95% H2/N2) environments to separate the contribution of temperature and ambient. The samples are electrically characterized by circular transfer length method structures, from which contact resistance and sheet resistance are analyzed. Ti and Ni are used as metal contacts. Ti does not react with PtSe2 at any given annealing step. In contrast to this, Ni reacts with PtSe2, resulting in a contact alloy formation. The results are supported by a combination of X-ray photoelectron spectroscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy, and cross-sectional transmission electron microscopy. The work sheds light on the impact of forming gas annealing on TMD–metal interfaces, and on the TMD film itself, which could be of great interest to improve the contact resistance of TMD-based devices.

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Defect evolution and dopant activation in laser annealed Si and Ge

Cited by 38 publications

References 38 publications

{001} loops in silicon unraveled

{001} loops in silicon unraveled

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers

Effects of Annealing Temperature and Ambient on Metal/PtSe₂ Contact Alloy Formation

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Defect evolution and dopant activation in laser annealed Si and Ge

Cited by 38 publications

References 38 publications

{001} loops in silicon unraveled

{001} loops in silicon unraveled

Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers

Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation

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Product

Resources

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Effects of Annealing Temperature and Ambient on Metal/PtSe₂ Contact Alloy Formation