Effects of Annealing Temperature and Ambient on Metal/PtSe<sub>2</sub> Contact Alloy Formation

Mirabelli, Gioele; Walsh, Lee A.; Gity, Farzan; Bhattacharjee, Shubhadeep; Cullen, Conor P.; Coileáin, Cormac Ó; Monaghan, Scott; McEvoy, Niall; Nagle, Roger; Hurley, Paul K.; Duffy, Ray

doi:10.1021/acsomega.9b02291

Cited by 10 publications

(10 citation statements)

References 47 publications

(69 reference statements)

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“…Low levels of PtS were found to be almost ever present in all of the PtS2 films synthesised here. A third component with 4 7 2 ⁄ at ~75.4 eV is fitted, assignment of this low intensity and broad doublet is difficult and it is provisionally assigned as a Pt-oxide due to the binding energy of the peaks, this aligns with previous interpretations for PtSe2 56 .…”

Section: Xps Of Pts and Pts2supporting

confidence: 78%

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

et al. 2021

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Section: Xps Of Pts and Pts2supporting

confidence: 78%

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

et al. 2021

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“…Thermally assisted conversion (TAC) of pre-deposited Pt layers, sometimes referred to as vapor-phase selenization or soft selenization, is another synthesis approach which is capable of producing thin films of layered PtSe 2 at relatively low temperature. [14][15][16][17][18][19]32,34,49] In this method, a thin film of Pt, typically deposited by sputtering or evaporation onto SiO 2 /Si or quartz substrates, is reacted with Se vapor inside a tube furnace to produce polycrystalline thin films of PtSe 2 . The thickness of PtSe 2 can be controlled via the thickness of the pre-deposited Pt layer and the placement of the PtSe 2 can be controlled through using shadow masks or lithography to define the dimensions of the predeposited Pt.…”

Section: Synthesis Methodsmentioning

confidence: 99%

“…Studies have indicated that Ni forms an alloy in the contact region with PtSe 2 whereas Ti does not. [ 49 ] In conventional top‐contacted geometries the presence of an additional van der Waals gap provides a further impediment to the flow of charge carriers. Much research has focused on optimizing contact resistances in 2D‐materials‐based FETs and one promising approach is the use of edge contacts which lead to stronger hybridization and lower contact resistance.…”

Section: Sensing and (Opto‐)electronic Devicesmentioning

confidence: 99%

Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications

Wang

McEvoy

et al. 2020

Advanced Materials

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An increasing enthusiasm for research into 2D nanostructures is driven by their exceptional mechanical, chemical, optical, and physical properties that arise from their atomically thin dimension. These properties make 2D nanostructures promising candidates for applications in the next generation of photonic, valleytronic, and (opto-)electronic devices. 2D black phosphorus, for instance, is a novel 2D material with a thickness-tunable bandgap and outstanding properties that have attracted tremendous interest. However, its commercial and industrial applications have been greatly hindered by its poor environmental stability. [1] Layered transition metal dichalcogenides (TMDs), such as MoS 2 , WS 2 , and MoSe 2 , have been experimentally demonstrated to possess thickness-dependent bandgaps and many other promising physical, chemical, and mechanical properties. However, the majority of these TMDs suffer from relatively low charge-carrier mobilities, rather large Schottky barriers when contacted with metals, complicated fabrication processes and a narrow spectral response mainly in the visible region. [2,3] As a result, even though the first report on the experimental isolation of graphene was 16 years ago, [4] and researchers worldwide have spent massive time and effort investigating 2D materials, thus far few have been effectively employed in industrial and commercial applications. Recently, layered PtSe 2 , a Group-10 TMD, has been demonstrated to be one of the most promising 2D materials for adoption by industries due to its unprecedented photonic, physical, and chemical properties along with lowtemperature synthesis methods, high charge-carrier mobilities and long-term air stability. [5-11] One of the important industrial advantages of PtSe 2 is the developed synthesis methods, some of which are compatible with modern silicon technologies. The studied methods to synthesize layered PtSe 2 include molecular-beam epitaxy (MBE), [7,12] chemical vapor deposition (CVD), [8,13] thermally assisted conversion (TAC), [14-20] chemical vapor transport (CVT), [5] plasma-assisted selenization (PAS), [21] microwave assisted synthesis (MAS), [22] mechanical exfoliation (ME), [13,23] the wet chemical (WC) method, [24,20] and so on. Both MBE and CVD are typically carried out at high temperature and can result in high-quality PtSe 2 monolayers. In contrast, wafer-scale and thickness-tunable layered PtSe 2 can be obtained using TAC Since the first experimental discovery of graphene 16 years ago, many other 2D layered nanomaterials have been reported. However, the majority of 2D nanostructures suffer from relatively complicated fabrication processes that have bottlenecked their development and their uptake by industry for practical applications. Here, the recent progress in sensing, photonic, and (opto-)electronic applications of PtSe 2 , a 2D layered material that is likely to be used in industries benefiting from its high air-stability and semiconductor-technology-compatible fabrication methods, is reviewed. The advantages and disad...

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“…Chemical interactions of reactive metals with the underlying layered MC can affect interface structure as well as optoelectronic properties [124,125] . In addition, annealing can induce phase transformations at different material‐MC interfaces that are not otherwise favored at room temperature [126–129] . Understanding these interfacial phase transformations is essential for tailoring the physicochemical properties of layered MC devices.…”

Section: Structural and Chemical Transformations At Interfacesmentioning

confidence: 99%

“…[124,125] In addition, annealing can induce phase transformations at different material-MC interfaces that are not otherwise favored at room temperature. [126][127][128][129] Understanding these interfacial phase transformations is essential for tailoring the physicochemical properties of layered MC devices. In situ experiments are particularly useful for characterizing such transformations, and this section discusses several such efforts.…”

Section: Phase Transformations At Layered MC Interfacesmentioning

confidence: 99%

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

et al. 2021

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Layered metal chalcogenide materials, such as MoS2 and Bi2Te3, have found important applications as 2D materials in emerging electronic devices. To create nanoscale layered chalcogenide materials with precisely controlled structures and properties, it is critical to understand and control how they evolve and transform under various conditions. This Minireview presents an overview of recent research focused on using in situ characterization to understand the atomic‐scale details of transformations during growth, under exposure to reactive chemical and thermal environments, and on interfacing with other materials. These efforts have used techniques including in situ transmission electron microscopy (TEM), X‐ray spectroscopy, and optical methods to understand nanoscale transformations. These in situ studies have provided a substantially improved understanding of transformation mechanisms in layered chalcogenide materials, which is an important step toward the use of these interesting materials in a variety of electronic and electrochemical devices.

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Effects of Annealing Temperature and Ambient on Metal/PtSe₂ Contact Alloy Formation

Cited by 10 publications

References 47 publications

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

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Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation

Cited by 10 publications

References 47 publications

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Synthesis and characterisation of thin-film platinum disulfide and platinum sulfide

Layered PtSe2 for Sensing, Photonic, and (Opto‐)Electronic Applications

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

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Product

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Effects of Annealing Temperature and Ambient on Metal/PtSe₂ Contact Alloy Formation

Layered PtSe₂ for Sensing, Photonic, and (Opto‐)Electronic Applications