Defect formation and recrystallization in the silicon on sapphire films under Si+ irradiation

Shemukhin, A. A.; Nazarov, A. V.; Balakshin, Yu. V.; Chernysh, V. S.

doi:10.1016/j.nimb.2014.11.090

Cited by 24 publications

(5 citation statements)

References 7 publications

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“…Doolittle's program [16]. The accuracy of the method at maximum concentration of the implanted element usually is about several percent [17]. Sputtered Pt film thickness was determined by weight measurements and cross-sectional TEM images obtained using microscope Titan 80e300 S/TEM (FEI, USA).…”

Section: Characterization Methodsmentioning

confidence: 99%

New physical technologies for catalyst synthesis and anticorrosion protection

Фатеев

Alekseeva

Lutikova

et al. 2016

International Journal of Hydrogen Energy

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Section: Characterization Methodsmentioning

confidence: 99%

New physical technologies for catalyst synthesis and anticorrosion protection

Фатеев

Alekseeva

Lutikova

et al. 2016

International Journal of Hydrogen Energy

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“…Снижение интенсивности пика при 520 и рост интенсивности пика при 480 см −1 с ростом дозы облучения говорит о разупорядочении кристаллической структуры образца. Незначительная интенсивность пика 520 см −1 в спектре, соответствующем дозе 10 15 см −2 , говорит о практически полной аморфизации модифицированного облучением слоя, что подтверждается результатами измерения спектров резерфордовского обратного рассеяния (РОР) [25].…”

Section: результаты и обсуждениеunclassified

Особенности Дефектообразования В Наноструктурированном Кремнии При Ионном Облучении

Кожемяко¹,

Евсеев²,

Балакшин³

et al. 2019

Физика И Техника Полупроводников

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Irradiations of the nanostructured silicon with Si+ and He+ ions were carried out with energies of 200 and 150 keV, respectively. Raman scattering showed destruction of the structure after irradiations and accumulation of defects at different fluences of irradiation. It is shown that monocrystalline silicon films are amorphized under irradiation at 0.7 displacement per atom. However, porous silicon does not completely amorphize at 0.5 displacement per atom, a weak signal is observed in the Raman spectra corresponding to the amorphous silicon phase, and at the same time there is an obvious signal from the crystalline phase of silicon. The size of nanocrystallites in the structure of porous silicon was estimated at different fluences of irradiation.

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“…Флюенсы облучения в различных случаях составляли 5 • 10 14 или 5 • 10 15 ион/см 2 . Облучение однозарядными ионами проводилось на ускорительном комплексе HVEE Московского университета, одна из линий которого приспособлена для контролируемого равномерного облучения твердотельных мишеней [27,28]. Однородность облучения обеспечивалась сканированием образца пучком в двух взаимно перпендикулярных направлениях с большой частотой.…”

Section: экспериментальные методыunclassified

Влияние Зарядового Состояния Ионов Ксенона На Профиль Распределения По Глубине При Имплантации В Кремний

Балакшин¹,

Кожемяко²,

Petrovic³

et al. 2019

Физика И Техника Полупроводников

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Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (10^14–10^15) ion/cm^2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

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Defect formation and recrystallization in the silicon on sapphire films under Si+ irradiation

Cited by 24 publications

References 7 publications

New physical technologies for catalyst synthesis and anticorrosion protection

New physical technologies for catalyst synthesis and anticorrosion protection

Особенности Дефектообразования В Наноструктурированном Кремнии При Ионном Облучении

Влияние Зарядового Состояния Ионов Ксенона На Профиль Распределения По Глубине При Имплантации В Кремний

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