Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

Cao, X. A.; Sandvik, Peter; LeBoeuf, S. F.; Arthur, Steve

doi:10.1016/j.microrel.2003.06.001

Cited by 138 publications

(89 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…However, the fluctuation and relative stable status of the forward voltage in this stage indicate a competition existing between the degradation of the ohmic contact 10 and the tunneling of the carrier due to the defect in the chip. 9,17 Afterwards, the increase of the forward voltage and the stable radiant flux indicate that there was no further deteriorations in the chip and package but the interconnect failure mode became dominant. 8 However, after about 2500 h, no obvious change can be observed in the forward voltages.…”

Section: A Degradation Behaviorsmentioning

confidence: 99%

“…[3][4][5][6][7] The failures of LEDs can be originated from the different parts of device structure, such as semiconductor die, interconnects and package. 8 For the semiconductor die, the failure mechanism have been found to be mostly related to the defect generation/propagation, dopant diffusion, and electro-migration; 9,10 The interconnects associated failure mechanisms were mostly due to the bond wire fracture, wire ball bond fatigue, and electrostatic discharge; [11][12][13] While for the packages, carbonization of encapsulant, delamination, encapsulant yellowing, and phosphor thermal quenching from the package have also been observed. [14][15][16] In addition, during the aging tests, it has been reported that the degradation behaviors and failure mechanisms would be different at different aging states.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Degradation and corresponding failure mechanism for GaN-based LEDs

Zhao

Cao

et al. 2016

AIP Advances

View full text Add to dashboard Cite

The degradation behaviors of high power GaN-based vertical blue LEDs on Si substrates were measured using in-situ accelerated life test. The results show that the dominant failure mechanism would be different during the operation. Besides that, the corresponding associated failure mechanisms were investigated systematically by using different analysis technologies, such as Scan Electron Microscopy, Reflectivity spectroscopy, Transient Thermal Analysis, Raman Spectra, etc. It is shown that initially, the failure modes were mainly originated from the semiconductor die and interconnect, while afterwards, the following serious deterioration of the radiant fluxes was attributed to the package. The interface material and quality, such as die attach and frame, play an important role in determining the thermal performance and reliability. In addition, the heating effect during the operation will also release the compressive strain in the chip. These findings will help to improve the reliability of GaN-based LEDs, especially for the LEDs with vertical structure.

show abstract

Section: A Degradation Behaviorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Degradation and corresponding failure mechanism for GaN-based LEDs

Zhao

Cao

et al. 2016

AIP Advances

View full text Add to dashboard Cite

show abstract

“…They don't essentially reveal the inner mechanisms of the aging of LED. Although there are some researches pointing out that continuous increasement of non-radiative combination centres are the main reason lead to the aging of LED [3][4][5][6], they don't give a concrete relation between the density of non-radiative combination centres and aging time. In this paper, a model is used to describe the variation of non-radiative combination centres with aging time.…”

Section: Introductionmentioning

confidence: 99%

A research on the reliability of light-emitting diode based on analyzing of chip image

Ruan

Qian

2016

MATEC Web Conf.

View full text Add to dashboard Cite

Abstract. This paper proposes a new method for studying the reliability of high-power light-emitting diode (LED) by analyzing chip images taken from a batch of LEDs which are selected to conduct the accelerated aging test lasting for 1400 hours. To exclude the disturbance of electrode in these images, an image processing algorithm based on projection is used to extract the interested section. An index called "dark point" which is related to non-radiative combination to describe the reliability of LED is proposed. The method is based on analyzing the variation trends of dark points in the extracted section of these images. The results show that the proportion of the dark point increases with aging time increasing. The lifetime of LED with higher increasing rate is shorter. Based on the increasing rate of dark point, the lifetime of the chip can be predicted in an easier way.

show abstract

“…Снижение ВКЭ в УФ светодиодах объяснено активацией прорастающих дислокаций вакансия-ми азота, усилением проводимости этих дислокаций и потерей части носителей [2], или миграцией алю-миния [8]. Общим мнением можно считать, что деградация оптической мощности светодиодов развива-ется в результате генерации точечных дефектов в активной области под действием инжекционного тока, усиливающей безызлучательную рекомбинацию [1,9]. Однако усиление генерации точечных дефектов ИЗУЧЕНИЕ МЕХАНИЗМОВ, ОТВЕТСТВЕННЫХ ЗА ДЕГРАДАЦИЮ ЭФФЕКТИВНОСТИ... Научно-технический вестник информационных технологий, механики и оптики, 2015, Том 15, № 1 48 должно было бы приводить на финальной стадии, также как в светодиодах на основе традиционных А3В5 материалов, к скольжению, переползанию и мультипликации дислокаций с образованием дислока-ционной сетки в активной области светодиодов.…”

Section: Introductionunclassified