2006
DOI: 10.1063/1.2400068
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Defect induced formation of CoSi2 nanowires by focused ion beam synthesis

Abstract: Cobalt implantation with a focused ion beam ͑FIB͒ was applied to study ion beam synthesis of cobalt disilicide nanowires in silicon. Two mechanisms of CoSi 2 nanowire formation were investigated: ͑a͒ conventional synthesis by Co ++ FIB implantation at elevated temperatures into silicon along in-plane ͗110͘ Si crystal direction and subsequent annealing and ͑b͒ self-aligned CoSi 2 nanowire growth in cobalt supersaturated silicon on FIB-induced defects at room temperature during subsequent annealing. The obtained… Show more

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Cited by 14 publications
(9 citation statements)
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“…Indeed, several reports of NW breakup do exist. 554,556,566 An even more complex process was demonstrated in Ref. 510.…”
Section: Ion Beam Synthesis Of Nwsmentioning
confidence: 99%
See 2 more Smart Citations
“…Indeed, several reports of NW breakup do exist. 554,556,566 An even more complex process was demonstrated in Ref. 510.…”
Section: Ion Beam Synthesis Of Nwsmentioning
confidence: 99%
“…557 FIB processing has also been used to improve on the electrical contact between NWs and electrodes. 558 The NW formation on surfaces can be enhanced by annealing to form, e.g., metal silicides, 512,554,556,559 ͑see Fig. 74͒ approach can be combined with etching methods to enhance the processing speed and obtain high-aspect ratio standing NWs.…”
Section: Ion Beam Synthesis Of Nwsmentioning
confidence: 99%
See 1 more Smart Citation
“…As shown in Fig. 19.40b in the case of a small misaligned FIB trace, the nanowires are not stable and decay into shorter ones chains of CoSi 2 nanoparticles [109,110]. Larger angles of misalignment result in the formation of chains of more or less prolonged CoSi 2 nanoparticles (Fig.…”
Section: Fib Assisted Synthesis Of New Solid-state Phasesmentioning
confidence: 94%
“…Top-down processes are capable for fabrication of both vertical and horizontal NW on different substrates. The horizontal NW fabrication is mainly performed on the Si-on-insulator (SOI) substrates by using different nanopatterning techniques, such as focused-ion-beam lithography 6 and electron beam lithography. The buried oxide (BOX) layer in SOI serves as the etch stop layer.…”
Section: Copyright 2011 Author(s) This Article Is Distributed Under mentioning
confidence: 99%