Defect-induced nucleation and growth of amorphous silicon

Lewis, Laurent J.; Nieminen, Risto M.

doi:10.1103/physrevb.54.1459

Cited by 22 publications

(19 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…͑iii͒ The remaining defects are considered to form a cluster. ͑␥ can thus be thought of as a ''clustering'' volume.͒ Single-collision cascade defect-cluster formation 15 or defectinduced nucleation of amorphous zones 16 are not considered.…”

Section: Direct Evidence For 8-interstitial-controlled Nucleation Of mentioning

confidence: 99%

Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si

Schiettekatte

Roorda

Poirier

et al. 2000

Applied Physics Letters

View full text Add to dashboard Cite

The areal density of extended defects in P-implanted and annealed Si is observed to increase with ion dose to the power 8. A simple model based on Poisson statistics applied to point defects created during ion implantation shows that such a dependence corresponds to enhanced stability of interstitial clusters consisting of at least eight interstitial atoms, and it implies an interstitial “clustering” radius of 0.8 nm. The direct observation of “n=8” confirms the curious behavior observed earlier in transient-enhanced diffusion of B in Si, and provides a quantitative explanation of the threshold dose for the formation of extended defects in ion-implanted Si.

show abstract

Section: Direct Evidence For 8-interstitial-controlled Nucleation Of mentioning

confidence: 99%

Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si

Schiettekatte

Roorda

Poirier

et al. 2000

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…A nucleation-and-growth character of the c-a transition in accordance with the homogeneous model was clearly established by Rault et al using in situ TEM analysis and the heterogeneous nucleation model for amorphization was ruled out. 13 More recently, the defect induced nucleation and growth of amorphous Si ͑a-Si͒ has been proposed 14 and it provides a view to comprehend different aspects of the homogeneous amorphization model. In several studies, the implantation-induced amorphization process has been viewed as a critical-point phenomena consisting of cooperative processes 1,2 and a sharp transition has been observed in some studies, 2 contrary to the picture of gradual buildup of damage leading to the amorphization beyond a certain number of displacements per atom ͑DPA͒.…”

Section: Crystalline To Amorphous Transition and Band Structure Evolumentioning

confidence: 99%

Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry

Giri

Tripurasundari

Raghavan

et al. 2001

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inStudy of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry J. Appl. Phys. 99, 123514 (2006); 10.1063/1.2207688Model-dielectric-function analysis of ion-implanted Si (100) wafers Transmission electron microscopy studies of crystal-to-amorphous transition in ion implanted silicon Crystalline to amorphous transition and subsequent microstructural evolution in silicon induced by Ar ϩ -ion implantation over a wide range of ion fluences (6ϫ10 13 -1ϫ10 17 cm Ϫ2 ) have been investigated by spectroscopic ellipsometry. In the evaluation of the optical and microstructural properties of the damaged layer, the contribution of the surface overlayer to the measured dielectric spectra was separated by fitting a multilayer model with an effective medium approximation. The best fit to the dielectric spectra for disordered silicon could be obtained by taking our highest-fluence implanted ͑fluenceϭ1ϫ10 17 ions/cm 2 ) amorphous silicon ͑a-Si͒ data as reference data instead of a-Si data available in the handbook. The derivative spectra as a function of fluence show a distinct and sharp transition from the crystalline to amorphous phase. The threshold fluence for this transition is derived from fitting. Evaluation of standard sum rules and optical moments for imaginary part of the pseudodielectric function reveals no substantial change in various physical parameters below the transition indicating their insensitivity to point defects, while it shows a large change with fluence above the threshold for amorphization. The disorder induced changes in the effective dielectric constant, number of valence electrons per atom participating in optical transition, Penn gap energy, average bond length, coordination number, effective dispersion oscillator energy, an average strength of the interband optical transition with fluence is discussed on the basis of microstructural evolution and corresponding band structure modification. It is also shown that the dielectric functions of damaged silicon are well represented by a sum of six classical Lorentz oscillators. With increasing fluences, each of the oscillator amplitude decreases and linewidth increases except for the 3.3 eV transition which shows increasing amplitude with fluence. These results are discussed in the context of short-range order/disorder and effective band gap reduction along with flattening of the bands with increasing fluence above the amorphization threshold.

show abstract

“…The phase change probably owes to the increase of defects, or the nucleus and growth of a-Si. [3] Different compositions and structures appear near the ion implanted surface, which leads to the intrinsic stress due to lattice mismatch. Moreover, ion implantation device accelerates the ion beam to reach the desired energy for bombarding the object target continuously, which induces heating effects and thus thermal stresses due to the difference of thermal expanding coefficients between the implanted layer and the bulk substrate.…”

Section: Introductionmentioning

confidence: 99%

Experimental investigation of p-Si (100) surface modified by ion implantation

et al. 2008

View full text Add to dashboard Cite

Surface strengthening and residual stress in Ti+ implanted p-Si (100) wafers are investigated by scanning electron microscopy, X-ray diffraction, nano-indentation and micro-Raman spectroscopy. The experimental results revealed that the crystallinity decreases gradually in transition area, whose structure varies continuously from the crystalline Si to amorphous phase which appears in ion implanted area. Moreover, the hardness and elastic modulus increase gradually in the transition area. Compressive intrinsic-stress that comes from lattice mismatch between the implanted layer and Si substrate is one factor giving rise to residual stresses.

show abstract

Defect-induced nucleation and growth of amorphous silicon

Cited by 22 publications

References 14 publications

Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si

Direct evidence for 8-interstitial-controlled nucleation of extended defects in c-Si

Crystalline to amorphous transition and band structure evolution in ion-damaged silicon studied by spectroscopic ellipsometry

Experimental investigation of p-Si (100) surface modified by ion implantation

Contact Info

Product

Resources

About