Defect interactions in Sn1−xGex random alloys

Chroneos, Alexander; Jiang, Chao; Grimes, Robin W.; Schwingenschlögl, Udo; Bracht, H.

doi:10.1063/1.3159468

Cited by 71 publications

(58 citation statements)

References 28 publications

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“…The efficacy of this approach to adequately describe the defect chemistry of Ge and related materials has been demonstrated by comparing predictions with experimental results. [22][23][24] We also carried out some calculations for F n V m clusters in Si and found binding energy values that were very similar to those reported previously. 13,14 For example, our predicted binding energy of the FV pair in Si is Ϫ2.23 eV, which is in excellent agreement with the DFT study of Lopez et al 14 ͑Ϫ2.0 eV͒ and the experimental value of Pi et al 9 ͑Ϫ2.2 eV͒.…”

Section: Theoretical Methodologysupporting

confidence: 82%

Fluorine codoping in germanium to suppress donor diffusion and deactivation

Chroneos

Grimes

Bracht

2009

Journal of Applied Physics

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Electronic structure calculations are used to investigate the stability of fluorine-vacancy ͑F n V m ͒ clusters in germanium ͑Ge͒. Using mass action analysis, it is predicted that the F n V m clusters can remediate the concentration of free V considerably. Importantly, we find that F and P codoping leads to a reduction in the concentration of donor-vacancy ͑DV͒ pairs. These pairs are responsible for the atomic transport and the formation of D n V clusters that lead to a deactivation of donor atoms. The predictions are technologically significant as they point toward an approach by which V-mediated donor diffusion and the formation of inactive D n V clusters can be suppressed. This would result in shallow and fully electrically active n-type doped regions in Ge-based electronic devices.

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Section: Theoretical Methodologysupporting

confidence: 82%

Fluorine codoping in germanium to suppress donor diffusion and deactivation

Chroneos

Grimes

Bracht

2009

Journal of Applied Physics

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“…[40][41][42][43] For Sndoped Si there are a number of recent DFT studies using the present methodology. 44,45 …”

Section: B Theoretical Methodologymentioning

confidence: 99%

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Chroneos

Londos

Sgourou

2011

Journal of Applied Physics

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Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen-and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen-and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen-and carbon-related defect clusters in devices.

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“…Reprinted from [16], Copyright 2013, with permission from Elsevier. Reference numbers corresponding to index are a [137] and b [138]. capability for energy band design and lattice control technology similar to III-V compound semiconductors.…”

Section: Optoelectronic Device Applicationsmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Asano

et al. 2016

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

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We review the technology of Ge 1−x Sn x -related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge 1−x Sn x -related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge 1−x Sn x -related material thin films and the studies of the electronic properties of thin films, metals/Ge 1−x Sn x , and insulators/Ge 1−x Sn x interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge 1−x Sn x -related materials, as well as the reported performances of electronic devices using Ge 1−x Sn x related materials.

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Defect interactions in Sn1−xGex random alloys

Cited by 71 publications

References 28 publications

Fluorine codoping in germanium to suppress donor diffusion and deactivation

Fluorine codoping in germanium to suppress donor diffusion and deactivation

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Growth and applications of GeSn-related group-IV semiconductor materials

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