Defect kinetics and dopant activation in submicrosecond laser thermal processes

Huet, Karim; Fisicaro, Giuseppe; Venturini, J.; Besaucele, Herve; Magna, Antonino La

doi:10.1063/1.3268472

Cited by 26 publications

(18 citation statements)

References 17 publications

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“…Hence, along with KMC methodologies, great interest has developed in the past decades in continuous models, which deal with the same issues previously reported [14][15][16].…”

Section: Fully Continuous Modelingmentioning

confidence: 99%

Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon

et al. 2012

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Pulsed laser irradiation of damaged solids promotes ultrafast nonequilibrium kinetics, on the submicrosecond scale, leading to microscopic modifications of the material state. Reliable theoretical predictions of this evolution can be achieved only by simulating particle interactions in the presence of large and transient gradients of the thermal field. We propose a kinetic Monte Carlo (KMC) method for the simulation of damaged systems in the extremely far-from-equilibrium conditions caused by the laser irradiation. The reference systems are nonideal crystals containing point defect excesses, an order of magnitude larger than the equilibrium density, due to a preirradiation ion implantation process. The thermal and, eventual, melting problem is solved within the phase-field methodology, and the numerical solutions for the space-and time-dependent thermal field were then dynamically coupled to the KMC code. The formalism, implementation, and related tests of our computational code are discussed in detail.As an application example we analyze the evolution of the defect system caused by P ion implantation in Si under nanosecond pulsed irradiation. The simulation results suggest a significant annihilation of the implantation damage which can be well controlled by the laser fluence.

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“…Hence, along with KMC methodologies, great interest has developed in the past decades in continuous models, which deal with the same issues previously reported [14][15][16].…”

Section: Fully Continuous Modelingmentioning

confidence: 99%

Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon

et al. 2012

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“…1.5 J/cm 2 ) at a temperature just below the melting threshold. The calculation was made coupling the phase-field methodology 36 for the simulation of the temperature T and phase fields  with the thermo-elastic theory, where the constitutive relations…”

Section: Large Loops Lying On (001) Planes With Burgers Vector Parallmentioning

confidence: 99%

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Qiu

Cristiano

Huet³

et al. 2014

Nano Lett.

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Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron and silicon implanted silicon samples, the most stable form among the observed defects is that of dislocation loops lying close to (001) and with Burgers vector parallel to the [001] direction, instead of conventional {111} dislocation loops or {311} rod-like defects, which are known to be more energetically favorable and are typically observed in ion implanted silicon. The observed results are explained in terms of a possible modification of the defect formation energy induced by the compressive stress developed in the nonmelted regions during laser annealing.

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“…As a consequence, the damage initialization corresponds to a space dependent cluster size distributions of I and V type aggregates, where the total defects dose stored in cluster of size N ≥ 2 is reduced to the ∼10% of the total dose estimated by means of TRIM simulation due to the dynamic annealing [15]. However, we note that the simulation results shown here are not qualitatively affected by the particular initial choice of the cluster size distribution [13]. The SIMS as implanted P profile is used to initialize the impurity in the simulation.…”

Section: S(xt)=e Las P(t)(1-r)αexp(-αx)mentioning

confidence: 85%

Dopant activation and damage evolution in implanted silicon after excimer laser annealing

Fisicaro

Italia

Piccitto

et al. 2010

Phys. Status Solidi (c)

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The relationship between dopant activation and damage evolution in implanted silicon after multi‐pulsed laser thermal annealing process is investigated by means of simulations and experimental analysis. The code simulates the dopant evolution coupled to the defect kinetics in the presence of fast varying temperature, high thermal gradients and phase transition. It considers defects (interstitials Is and vacancies Vs) clustering, annihilation and the interaction between point defects and the active/inactive fractions of the impurity density. Simulations allow a characterization of the residual damage as a function of the process conditions. Moreover, the model correctly predicts some experimental P profiles. Among the studied irradiation conditions, the partial melting regime shows an interesting dynamics of the active profile fraction as a function of laser energy and the pulse number. Finally, simulations also demonstrate that the status of the defect system rules the activation phenomenon, which can be reliably predicted only including in the model the defect‐(active)impurity coupling (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Defect kinetics and dopant activation in submicrosecond laser thermal processes

Cited by 26 publications

References 17 publications

Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon

Kinetic Monte Carlo simulations for transient thermal fields: Computational methodology and application to the submicrosecond laser processes in implanted silicon

Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon

Dopant activation and damage evolution in implanted silicon after excimer laser annealing

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