Defect passivation strategy for inorganic CsPbI2Br perovskite solar cell with a high-efficiency of 16.77%

Three-Dimensional/Two-Dimensional Perovskite-Resistive Random-Access Memory with Low SET Voltage and High Stability

“…To further investigate the stability of the devices under a harsh environment, the endurance of the RRAM at different temperatures was studied, as displayed in Figure d. The devices could work even at 353 K. However, the performance of the device began to degrade gradually when the temperature was increased to over 353 K. The PbX 6 octahedral skeleton in the perovskite may be destroyed by the evaporation of halogen ions due to the high temperature . The devices with 3D/2D perovskite represented excellent long-term environmental stability.…”

The progress and efficiency of CsPbI2Br perovskite solar cells

“…A Lewis base molecule of NMP was introduced to suppress the non-radiative recombination and reduce the defects on the surface or GBs of a CsPbI 2 Br film. 115 It was found that the NMP additive induced a strong interaction between the Pb-O bond and CsPbI 2 Br perovskite, shown in Fig. 9f, thus enhancing the crystallization and greatly reducing the non-radiative recombination paths via defect passivation.…”

Inorganic CsPbI2Br halide perovskites: from fundamentals to solar cell optimizations

“…The device under investigation with 2.5% NMP exhibited a higher PCE of 16.77% (a J SC of 16.70 mA cm −2 , a V OC of 1.26 V and an FF of 0.800), as well as higher device stability in the N 2 atmosphere. 43 The multifunctional groups (CO and C–OH) of the 2-hydroxyethyl methacrylate (HEMA) liquid dopant in the CsPbI 2 Br precursor not only had a good interaction with uncoordinated ions of CsPbI 2 Br ( i.e. , CO interacted with Pb 2+ and –OH interacted with halide species), but could also be polymerized to form a compact hydrophobic polymer at the perovskite grain boundaries by breaking the CC bond at 160 °C (Fig.…”