Defect production in ion-implanted yttria-stabilized zirconia investigated by positron depth profiling

Saudé, S.; Grynszpan, R.I.; Anwand, W.; Bräuer, G.

doi:10.1016/j.jallcom.2004.02.062

Cited by 9 publications

(6 citation statements)

References 22 publications

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“…▵ S increases with fluence from 5 × 10 15 to 2 × 10 16 cm −2 , above which no significant increase can be observed. Previous PAS work on irradiation‐induced damage in single‐crystal YSZ has revealed a similar evolution in ▵ S . In general, the rise in ▵ S below 2 × 10 16 cm −2 can be attributed to the continuous increase in the number and size of vacancy‐type defects, including isolated vacancy defects and small vacancy clusters.…”

Section: Resultsmentioning

confidence: 67%

“…The related parameters for positrons in ZrO 2 remain unknown, making it impossible to obtain information about the defect type and corresponding concentration from PAS results. Physical information about the irradiation‐induced defects were therefore qualitatively analyzed using the average S parameter shift (▵ S ) compared to the virgin sample from 5 to 8.25 keV, which is assumed to be the damage peak region. Figure (b) shows the variation in ▵ S as a function of irradiation fluence.…”

Section: Resultsmentioning

confidence: 99%

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Effects of He Irradiation on Yttria‐Stabilized Zirconia Ceramics

et al. 2014

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Effects of He irradiation on polycrystalline yttria-stabilized zirconia (YSZ) are studied with the focus on irradiation-induced damage buildup, He behavior, and volume swelling. The evolution of irradiation-induced structural damage in polycrystalline YSZ, which is independent of grain orientation, is described by a multistep damage accumulation model. A three-step damage evolution process was found, and different types of defects were observed in the different damage steps. Compared with singlecrystal YSZ, the second damage step occurs at a lower dose in polycrystalline YSZ due to the initial defects and strain. The implanted He ions are readily trapped along the grain boundaries and the mobility of He ions is greatly increased. The enhanced He mobility along the grain boundary leads to a lower threshold irradiation dose and a larger penetration depth for bubble formation. Similar morphologies are observed for the He bubbles in the polycrystalline YSZ and in single-crystal YSZ, and the formation of He bubbles in polycrystalline YSZ is not influenced by grain orientation. As both the extended defects and He bubbles can induce volume swelling, the variation in volume swelling as a function of dose can be divided into a two stage process.

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Section: Resultsmentioning

confidence: 67%

Section: Resultsmentioning

confidence: 99%

Effects of He Irradiation on Yttria‐Stabilized Zirconia Ceramics

et al. 2014

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“…After α bulk-irradiation, a slight enhancement of the mean lifetime has been detected around 200 °C [25]. At low fluence (stage 0-I), the S parameter smoothly decreases for both oxygen and helium implantation.…”

Section: Thermal Stability Of the Defectsmentioning

confidence: 96%

Positron Annihilation Investigation in Ion-implanted Yttria-stabilized Zirconia

2005

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Implantation with a variety of sub-MeV ions (He, Ar, Xe, O, and I) were performed on cubic single crystals of yttria-stabilized zirconia in order to assess the capability of such material to withstand high fluences as a confinement matrix for nuclear waste. In this work, we confronted the results of both Doppler Broadening using slow positron implantation spectroscopy (DB-SPIS) and the Rutherford Backscattering/Channeling spectroscopy (RBS-C) which are sensitive to lattice defects almost opposite in nature. In spite of their difference in defect specific sensitivity, and except for a precursory damage production stage almost exclusively exhibited by SPIS for very low doses (< 0.1 dpa), either techniques show a similar fluence dependence, which exhibits 3 stages starting respectively around 0.1, 2 and 3 dpa, regardless of the damaging ion. However, owing to the stage I plateau displayed in the variation of the DB-SPIS lineshape parameter, we were able to estimate an ion-mass dependence of the critical size of open-volume defects reached before the production of new predominant defects.

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“…The S parameter refers to the fraction of the normalized photopeak area within an arbitrary energy window centered around 511 keV. That window was set to obtain an S bulk value of 0.5 for the defect-free reference sample [13]. The W parameter refers to the fraction of the normalized photopeak area within two arbitrary energy windows approximately matching the FWF M and the FWT M of reference spectrum, where F and T stand for one-fifth and one-tenth of the maximum height, respectively.…”

Section: Positron Annihilation Characterizationmentioning

confidence: 99%

“…Those windows were set to obtain a W bulk value of 0.2 for the defect free reference sample. Other relevant experimental conditions defining DB parameters are described elsewhere [13]. Several lifetime components τ i may be resolved from the lifetime spectrum corresponding to helium-implanted Au 60 Ag 40 , indicating the presence of several types of defects.…”

Section: Positron Annihilation Characterizationmentioning

confidence: 99%

Radiation defects induced by helium implantation in gold-based alloys investigated by positron annihilation spectroscopy

Thomé

Grynszpan²

2006

Radiation Effects and Defects in Solids

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The formation of gas bubbles in metallic materials may result in drastic degradation of in-service properties. In order to investigate this effect in high density and medium-low melting temperature (T M ) alloys, positron annihilation spectroscopy measurements were performed on helium-implanted gold-silver solid solutions after isochronal annealing treatments. Three recovery stages are observed, attributed to the migration and elimination of defects not stabilized by helium atoms, helium bubble nucleation and bubble growth. Similarities with other metals are found for the recovery stages involving bubble nucleation and growth processes. Lifetime measurements indicate that He implantation leads to the formation of small and over-pressurized bubbles that generate internal stresses in the material. A comprehensive picture is drawn for possible mechanisms of helium bubble evolution. Two values of activation energy (0.26 and 0.53 eV) are determined below and above 0.7T M , respectively, from the variation of the helium bubble radius during the bubble growth stage. The migration and coalescence mechanism, which accounts for these very low activation energies, controls the helium bubble growth.

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Defect production in ion-implanted yttria-stabilized zirconia investigated by positron depth profiling

Cited by 9 publications

References 22 publications

Effects of He Irradiation on Yttria‐Stabilized Zirconia Ceramics

Effects of He Irradiation on Yttria‐Stabilized Zirconia Ceramics

Positron Annihilation Investigation in Ion-implanted Yttria-stabilized Zirconia

Radiation defects induced by helium implantation in gold-based alloys investigated by positron annihilation spectroscopy

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