High-temperature stability of ion-implanted zirconia and spinel Cubic zirconia single-crystals (yttria-stabilized zirconia (YSZ)) have been irradiated with 4 MeV Au 2þ ions in a broad fluence range (namely from 5 Â 10 12 to 2 Â 10 16 cm À2) and at five temperatures: 80, 300, 573, 773, and 1073 K. Irradiated samples have been characterized by Rutherford backscattering spectroscopy in channeling mode, X-ray diffraction and transmission electron microscopy techniques in order to determine the disordering kinetics. All experimental results show that, whatever is the irradiation temperature, the damage build-up follows a multi-step process. In addition, the disorder level at high fluence is very similar for all temperatures. Thus, no enhanced dynamic annealing process is observed. On the other hand, transitions in the damage accumulation process occur earlier in fluence with increasing temperature. It is shown that temperature as low as 573 K is sufficient to accelerate the disordering process in ion-irradiated YSZ. V C 2014 AIP Publishing LLC. [http://dx.

Quantitative measurement of surface potential and amount of charging on insulator surface under electron beam irradiation J. Appl. Phys. 92, 6128 (2002); 10.1063/1.1513205Effect of deposition interruption and substrate bias on the structure of sputter-deposited yttria-stabilized zirconia thin films This article presents a study performed with a dedicated scanning electron microscope on the electrical property evolution of surfaces of ͑0001͒-oriented sapphire (Al 2 O 3 ) and ͑100͒-oriented yttria-stabilized zirconia ͑YSZ͒ single crystals, during a 1.1 keV electron irradiation at room temperature. The type of charges trapped on the irradiated areas and the charging kinetics are determined by measuring the total secondary electron emission yield during the injection process, by means of two complementary detectors. At low current density (Ͻ7ϫ10 6 pA cm Ϫ2 ) where positive charging is observed in both materials, charges trapped in Al 2 O 3 are stable, whereas they are unstable in YSZ. This leads to two different charging kinetics. As charging is progressing in Al 2 O 3 , varies from its initial intrinsic value 7.5 down to a steady value ϭ1 which corresponds to the self-regulated regime. Under the same conditions, varies in YSZ from 2.35 down to a steady value above 1 ͑ϭ1.1 in the experiment presented͒. At high current density ͑above 7ϫ10 6 and 6ϫ10 9 pA cm Ϫ2 , respectively, for Al 2 O 3 and YSZ͒, the regulation of the charge regime is controlled by the formation of a negative charge layer due to the reduction of the secondary electron emission by the elastic interaction of incident electrons with secondaries. The difference in the charging kinetics of the two materials is attributed to the difference in conductivities. The higher conductivity of YSZ is responsible for the slower charging kinetics in YSZ, the less pronounced current density effect, and the vanishing of positive charges when irradiation stops.

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