Defect reactions in gallium antimonide studied by zinc and self-diffusion

Sunder, Kirsten; Bracht, H.

doi:10.1016/j.physb.2007.08.162

Cited by 9 publications

(7 citation statements)

References 13 publications

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“…2(a) on the [Zn] doping level of the overgrown GaAs layer. The main point is that Ga vacancies favor the accommodation of the injected Zn atoms into substitutional positions, 22,24 therefore in the lower Zn doped sample a higher density of Ga vacancy remains free to migrate and to compensate donors in the n-type side of the junction. The unavoidable heating of the samples during the growth of the GaAs layer (see Table I) is then sufficient to trigger the V Ga migration and the SCR widening, thus explaining the different CV profile of the not annealed low doped sample with respect to the 20-NA sample ( Fig.…”

Section: Resultsmentioning

confidence: 99%

“…[22][23][24] As it results from the latter study, the mutual interactions between several processes-in particular, the formation of native defects and complexes involving vacancies, the mechanism of Zn diffusion and Ga selfdiffusion-as well as the influence on such processes of thermal treatments, of Zn doping level and of stoichiometric deviation toward Ga-rich or Sb-rich conditions, can be at the origin of unexpected electrical phenomena in GaSb. EXPERIMENTAL p(Zn)-GaAs layers were grown on n-type GaSb wafers through a horizontal low-pressure MOVPE Aixtron reactor (AIX200 RD), equipped with a single rotating susceptor.…”

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confidence: 78%

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Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures

Baldini

Gombia

Parisini

et al. 2013

Journal of Applied Physics

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 78%

Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures

Baldini

Gombia

Parisini

et al. 2013

Journal of Applied Physics

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“…An attempt to validate this proposal was inconclusive. 28 There remains, however, the similar behavior with Ref. 25 27 is the purity of their starting enriched isotopes and the resulting purity of the epilayers.…”

Section: Self-diffusion In Insb and Gasbmentioning

confidence: 68%

Limits of the ratios of tracer diffusivities for diffusion by vacancy pairs: Application to compound semiconductors

Belova

Shaw

Murch

2009

Journal of Applied Physics

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In this paper, the vacancy-pair diffusion mechanism in cubic materials is revisited with emphasis on the limits of the ratio of the tracer diffusion coefficients to demonstrate the operation of this mechanism. The vacancy-pair mechanism puts very strict upper and lower bounds on this ratio. Extensive high precision Monte Carlo simulation is used to calculate tracer correlation factor, ratios of tracer diffusivities, and percolation effects ͑in mixed compounds͒. The three major cubic lattices-NaCl, CsCl, and zinc blende structures-are analyzed, and correct limits for the ratio of the tracer diffusivities are found to be 5.6, 11.2, and 2.6, respectively. For the case of the CsCl structure correlation factors are redetermined using the matrix method to obtain good agreement with the Monte Carlo results. Self-diffusion in the compound semiconductors PbSe ͑NaCl structure͒ InSb, GaSb, CdTe, and HgCdTe ͑zinc blende structure͒ is reanalyzed. It is shown that the vacancy-pair mechanism is unlikely to contribute to self-diffusion in CdTe and HgCdTe but it remains a valid possibility for self-diffusion in PbSe, InSb, and GaSb.

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“…In Refs. and the build‐up of the buried junction has been described in the light of the mechanisms of Zn diffusion and Ga self‐diffusion in GaSb, widely explored in the recent past by Bracht and coworkers , by assigning to Ga vacancies a key role.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of a buried GaSb p‐n junction controlled by native defects

Gorni

Parisini

Gombia

et al. 2014

Crystal Research and Technology

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Buried GaSb junctions were induced in Te‐doped GaSb bulk crystals by growing a heavily Zn‐doped GaAs layer on GaSb. However, the p‐n junction resulted to be located much more deeply with respect to the Zn diffusion front and originated by a local rising up of native acceptor density, which controls the p‐type conductivity conversion of the GaSb substrate for about 1 μm beyond the Zn penetration depth. Admittance spectroscopy measurements supported the identification of such defects with the double native acceptor GaSb. Current‐voltage characteristics of the p‐n junction, performed after the removal of the GaAs layer, were here analyzed as a function of the temperature for different Zn doping levels and resulted consistent with the model previously proposed to explain the formation of the junctions.

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Defect reactions in gallium antimonide studied by zinc and self-diffusion

Cited by 9 publications

References 13 publications

Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures

Admittance spectroscopy on buried GaSb junctions due to defect distribution in GaAs/GaSb metalorganic vapor phase epitaxy heterostructures

Limits of the ratios of tracer diffusivities for diffusion by vacancy pairs: Application to compound semiconductors

Electrical characterization of a buried GaSb p‐n junction controlled by native defects

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