Defect reduction in semipolar {101̄3̄} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth

Abstract

A method to obtain high quality semipolar {101̄3̄} GaN grown on m-plane sapphire is presented. This method is similar to two-step nanoepitaxial lateral overgrowth (2S-NELOG) by combining a TiN interlayer and self-assembled SiO2 nanospheres.

Epitaxial growth and characterization of high-quality aluminum films on sapphire substrates by molecular beam epitaxy

“…[17][18][19][20][21][22] In order to circumvent the issue, several technologies, such as buffer layer, epitaxial lateral overgrowth, pattern design of the Si substrates, etc., need to be used. [44][45][46][47][48][49][50][51] These technologies can reduce dislocation density and release the stress to some extent, and eventually benefit the growth of high-quality Al films on Si substrates. [44][45][46][47][48][49][50][51] Therefore, these pieces of evidence show the higher crystalline quality of Al epitaxial film grown in this work.…”

“…[44][45][46][47][48][49][50][51] These technologies can reduce dislocation density and release the stress to some extent, and eventually benefit the growth of high-quality Al films on Si substrates. [44][45][46][47][48][49][50][51] Therefore, these pieces of evidence show the higher crystalline quality of Al epitaxial film grown in this work. This achievement of higher quality Al epitaxial films mainly may be ascribed to two aspects.…”

Evaluations of the microstructures at the interface between the semipolar (101̄3) AlN epilayer and the m-plane (101̄0) sapphire substrate

“…N-polar (101 ¯3 ¯) GaN epilayers have been mainly obtained. 12,[17][18][19][20][21] Jo et al reported (101 ¯3 ¯) AlN growth on the (101 ¯0) sapphire substrate without nitridation by MOCVD. 31 They pointed out that nitridation is a key factor in controlling the crystal orientations of semipolar AlN grown on an m-plane sapphire substrate.…”

“…Research works concerning the heteroepitaxial growth of semipolar {101 ¯3} epilayers on m-plane (101 ¯0) sapphire substrates have been reported. 12,[17][18][19][20][21][22][23][24][25] Based on the reports, it is possible to grow both N-polar (101 ¯3 ¯) and metal-polar (101 ¯3) III-nitride semipolar planes. (101 ¯3 ¯) GaN epilayers have been mainly grown by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD).…”

“…(101 ¯3 ¯) GaN epilayers have been mainly grown by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor deposition (MOCVD). 12,[17][18][19][20][21] On the other hand, (101 ¯3) GaN epilayers have been obtained by using a (101 ¯3) GaN template or a directional sputtered Al and AlN layer. [22][23][24][25] It is interesting to know what happens and how to control the lattice-polarity in {101 ¯3} epilayer growth.…”