Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy

Su, Jie; Liang, Dongdong; Zhao, Yun; Yang, Jun; Chang, Hung‐Chih; Duan, Ruihong; Wang, Junxi; Sun, Lianfeng; Wei, Tongbo

doi:10.1016/j.apsusc.2020.146747

Cited by 7 publications

(7 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…During van der Waals epitaxy, nucleation density and crystalline alignment on the van der Waals surface are significantly suppressed due to the low surface free energy, leading to poor convergence or even failure in film formation. For example, directly growing GaAs or GaN on graphene tends to produce micro- and nanorods. − The orientation of GaAs or GaN unit cells is observed not strictly aligned to that of graphene unit cells during the van der Waals epitaxy process due to the weak interactions. , In the reports that show GaN layer exfoliation, rough surface morphology and polycrystalline structure are often observed. − Moreover, 2D materials are susceptible to damage due to the harsh ambient where crystalline semiconductor thin films are produced. Damaged 2D materials and the associated defective van der Waals surfaces can lead to failure in releasing the membranes.…”

mentioning

confidence: 99%

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes

et al. 2021

View full text Add to dashboard Cite

Free-standing crystalline membranes are highly desirable owing to recent developments in heterogeneous integration of dissimilar materials. Van der Waals (vdW) epitaxy enables the release of crystalline membranes from their substrates. However, suppressed nucleation density due to low surface energy has been a challenge for crystallization; reactive materials synthesis environments can induce detrimental damage to vdW surfaces, often leading to failures in membrane release. This work demonstrates a novel platform based on graphitized SiC for fabricating high-quality free-standing membranes. After mechanically removing epitaxial graphene on a graphitized SiC wafer, the quasi-two-dimensional graphene buffer layer (GBL) surface remains intact for epitaxial growth. The reduced vdW gap between the epilayer and substrate enhances epitaxial interaction, promoting remote epitaxy. Significantly improved nucleation and convergent quality of GaN are achieved on the GBL, resulting in the best quality GaN ever grown on two-dimensional materials. The GBL surface exhibits excellent resistance to harsh growth environments, enabling substrate reuse by repeated growth and exfoliation.

show abstract

mentioning

confidence: 99%

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Single crystalline GaN --2020 [43] sublimating the top Si surface and rearranging the remaining carbon atoms on the single-crystal SiC wafer. Mechanical spalling conducted using Ni as the stressor layer is mostly used for exfoliating epitaxial layers by using hard and atomically flat SiC wafers.…”

Section: Mrs -Copper Platementioning

confidence: 99%

“…In 2020, Su et al fabricated a self-separation freestanding GaN substrate through the dual-stack MLG. [43] Schematics of this process are shown in Figure 20a-j. To achieve a high-quality graphene layer, they pretreated a copper foil via acetic acidorganic cleaning-annealing.…”

Section: Transfer Of the Epitaxial Layer By Self-separationmentioning

confidence: 99%

See 1 more Smart Citation

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

Song

Chen

Yang

et al. 2023

Adv Funct Materials

Self Cite

View full text Add to dashboard Cite

Figure 1. An illustration shows the outline of this review article covering flexible nitride devices and exfoliation techniques based on 2D material implementations. The 2D material-based exfoliation methods are mainly divided into: a) thermal release tape-supported delamination method; ((a1) Reproduced with permission. [37] Copyright 2019, Wiley-VCH. (a2) Reproduced under terms of the CC-BY license. [25] Copyright 2020, The Authors, published by American Association for the Advancement of Science. (a3) Reproduced with permission. [38] Copyright 2021, American Chemical Society.) b) chemical release by etching of a sacrificial layer; ((b1) Reproduced with permission. [39] Copyright 2011, Wiley-VCH. (b2) Reproduced with permission. [40] Copyright 2013, American Institute of Physics. (b3) Reproduced under terms of the CC-BY license. [41] Copyright 2014, The Authors, published by American Institute of Physics.) c) mechanical spalling using the stressor layer; ((c1) Reproduced with permission. [26a] Copyright 2014, Springer Nature. (c2) Reproduced with permission. [42] Copyright 2021, American Chemical Society.) d) the transfer of the epitaxial layer by self-separation. ((d1) Reproduced with permission. [43] Copyright 2020, Elsevier. (d2) Reproduced with permission. [44]

show abstract

“…The critical step in this approach is the graphene layer transfer. Thicker graphene interlayers allow for easier exfoliation of the grown epilayer, since the separation of films tends to occur within graphene layers [ 3 , 16 ] due to weaker bindings between the graphene layers than that between the graphene and the GaN [ 17 , 18 ]. On the other hand, to ensure interaction between the substrate and the epilayer, the graphene interlayer thickness must not exceed two monolayers [ 1 , 9 , 11 ], which restrains the graphene layer to either monolayer or bilayer thickness.…”

Section: Introductionmentioning

confidence: 99%

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

et al. 2022

View full text Add to dashboard Cite

The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of the graphene interlayers was examined by Raman spectroscopy. The impact of the interlayer type on GaN nucleation was analyzed by scanning electron microscopy. The graphene interface and structural quality of GaN epilayers were studied by transmission electron microscopy and X-ray diffraction, respectively. The influence of the graphene interlayer type is discussed in terms of the differences between remote epitaxy and van der Waals epitaxy. The successful exfoliation of GaN membrane is demonstrated.

show abstract

Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy

Cited by 7 publications

References 28 publications

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Contact Info

Product

Resources

About