Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates

Wuu, Dong Sing; Wu, Hsueh Wei; Chen, Shih Ting; Tsai, Tsung Yen; Zheng, Xiaohong; Horng, Ray−Hua

doi:10.1016/j.jcrysgro.2009.01.107

Cited by 54 publications

(25 citation statements)

References 18 publications

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“…22 (a), (b) and (c) show the 10×10µm 2 AFM etching pit density scans from the GaN surface grown on the conventional substrate, HS and PS substrates, respectively. A similar result was obtained by Dong-Sing Wuu (Wuu et al, 2009). The GaN epilayers on recess/hole -patterned substrate had the highest quality (less defects density) and exhibited a regular distribution of threading dislocation.…”

Section: Epitaxial Lateral Overgrowthsupporting

confidence: 87%

Gallium Nitride: An Overview of Structural Defects

Yam¹,

Low²,

Oh³

et al. 2011

Optoelectronics - Materials and Techniques

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Section: Epitaxial Lateral Overgrowthsupporting

confidence: 87%

Gallium Nitride: An Overview of Structural Defects

Yam¹,

Low²,

Oh³

et al. 2011

Optoelectronics - Materials and Techniques

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“…The fabrication process of the crystallographic pyramidal patterns for the recess PSS has been reported previously. 9 The 2-lm-thick undoped GaN (u-GaN) was grown on the recess PSS by metal organic chemical vapor deposition. The molten H 3 PO 4 selectively etched defects and formed pits on the u-GaN surface at 270 C (Fig.…”

Section: Methodsmentioning

confidence: 99%

Improved Performance of Near-Ultraviolet Light Emitting Diodes on Selectively Etched GaN Templates

Tsai

Hung

et al. 2011

Electrochem. Solid-State Lett.

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An approach that dramatically improved the performance of near-ultraviolet InGaN-based light-emitting diodes (NUV-LEDs) was proposed using the selectively etched GaN (SE-GaN) template, which was fabricated via a combination of patterned sapphire substrate (PSS), defect selective etching, SiO 2 deposition and chemical-mechanical planarization. The dislocation density of n-type GaN regrown on the SE-GaN template can be reduced to 1.3 Â 10 5 cm À2 by concentrating threading dislocations (TDs) within undoped GaN and terminating the propagation of concentrated TDs. When operated with an injection current of 350 mA, the output power of the NUV-LED fabricated on SE-GaN template was 13% higher than that of NUV-LED fabricated on PSS.

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“…It is shown that, by using the negative photoresist forming recess on sapphire surface, the dislocation density in GaN layers is lower [66]. The growth of GaN epilayers on patterned sapphire substrate is shown in Fig.…”

Section: The Patterning Of Sapphire Substratementioning

confidence: 99%

“…Schematically, the process of patterning the sapphire substrate is shown in Fig. 1 [66]. A standard photolithography process using respective positive and negative photoresist was carried out to form a wet-chemical-etching mask with different SiO 2 patterns on the surface of sapphire substrate.…”

Section: The Patterning Of Sapphire Substratementioning

confidence: 99%

Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)

Parphenyuk¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. In this paper, different methods for lowering the dislocation density such as incorporation of the buffer layers, substrate patterning and nitridation, silan-ammonia treatment are reviewed and compared. Advantages and limitations of these methods as well as a specific mechanism to reduce the dislocation amount are discussed. Usually, high densities of threading dislocations within the range 10 10 …10 11 cm -2 are present in typical thin nitride films that are directly grown on sapphire substrate. Using these methods for substrate preparation, the density of dislocations can be reduced to the value 1·10 7 cm -2. An important process that enables to obtain the high-quality GaN layers with the low dislocation density is patterning the sapphire substrate. The dislocation density of these substrates depends on the pattern shape and orientation of patterned strips on cplane sapphire. Layers of GaN grown on a cone-shaped pattern have the lowest dislocation density. In addition, patterning the sapphire substrate increases the external quantum efficiency of radiative structures and reduces the mechanical stresses in the nitride layers.

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Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates

Cited by 54 publications

References 18 publications

Gallium Nitride: An Overview of Structural Defects

Gallium Nitride: An Overview of Structural Defects

Improved Performance of Near-Ultraviolet Light Emitting Diodes on Selectively Etched GaN Templates

Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)

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