Defect samarium ions and electromotive-force generation in SmS

Thermodynamics of the Point Defects in the Metallic Phase of the Samarium Monosulphide

“…Antisite defect was considered to be shallow donor with energy of ionizing 0,045 eV [3], and sulphur vacancy as shallow acceptor with energy of ionizing + (≈0.1) eV [7]. The density was determined by the formula: …”

“…Samarium monosulphide is a promising material for using it in many branches of electronics that is conditioned by the complex of unique qualities [1][2][3]. In particular it concerns the huge tensoresistive effect, isomorphic phase transition of the I kind semiconductor-metal at the low pressure and also the appearance of electric power at steady warming of this sample under the condition of absent external temperature gradients [1][2][3].…”

“…In particular it concerns the huge tensoresistive effect, isomorphic phase transition of the I kind semiconductor-metal at the low pressure and also the appearance of electric power at steady warming of this sample under the condition of absent external temperature gradients [1][2][3].…”

“…Point defects have a great influence on electrical properties of SmS whose concentration can reach to ~ 10 21 сm -3 due to wide zone of compound homogeneity displaced to direction of the samarium surplus. Accordingly to the researches [3,5,8] in crystals with samarium surplus the dominant defects are antisite samarium SmS atoms that form shallow donor levels with ionization energy 0,045eV in crystal band gap. Also sulphur vacancies can be formed in samarium monosulphide [6], that are considered to be shallow acceptors accordingly to [7].…”

Intrinsic Point Defects of Samarium Monosulphide Crystals in Metal Phase

“…Due to a whole set of unique properties [1][2][3], samarium monosulphide is a promising material for use in many fields of electronics. The main properties are: the tensoresistive effect, the first type isomorphic phase transition "semiconductor-metal" at low pressure, and appearance of the electric voltage after steady heating of the sample in the absence of external temperature gradients.…”