Defect studies in CuB^IIIC chalcopyrite compounds using the ion channeling technique

Abstract

Based on simple approximations the backscattering minimum yield is estimated for axial ion channeling in perfect crystals of six CuB"'CZ1 chalcopyrite compounds. The results obtained for CuInSe, are compared with experimental channeling spectra. Point defect concentrations up to about loz1 cm13 are estimated for CuInSe, single crystals grown by the vertical Bridgman method. A simple power law is found for the fluence dependence of the damage density in oxygen implanted CuInSe, single crystals.Auf der Grundlage einfacher Naherungen wird die minimale Ruckstreuausbeute fur axiale Ionenkanalisierung in perfekten Kristallen von sechs CuB"'C;'-Chalkopyritverbindungen abgeschatzt. Die fur CuInSe, erhaltenen Resultate werden mit experimentellen Kanalisierungsspektren verglichen. Fur nach der vertikalen Bridgman-Methode gezuchtete CuInSe,-Einkristalle werden Punktdefektkonzentrationen bis zu etwa 10" cm13 abgeschatzt. Fur die Dosisabhangigkeit der Defektdichte in mit Sauerstoff implantierten CuInSe,-Einkristallen wird ein einfaches Potenzgesetz gefunden.

XPS Analysis of Bridgman‐grown CuInTe2 and of its Native Oxide

“…Recently, the Rutherford backscattering/channeling technique has been used to study the defect properties of CuInTe2 single crystals (YAKUSHEV et al). As the main result of these investigations it has been established that the minimum backscattering yields of the ion channeling spectra are always distinctly higher than those estimated theoretically (NEUMANN 1994) and that this effect cannot be understood within a model of ion dechanneling due to point defects alone. As a possible explanation of the backscattering data it has been proposed that the enhanced dechanneling rates have their origin in extended defects formed to accomodate the relatively large deviations from ideal stoichiometry observed in all crystals.…”

Ion channeling in CuInSe2 single crystals

“…These publications concentrate mostly on relative changes in the aligned spectra before and after various modifications of the near surface layers of CuInSe 2 [10][11][12]. Only one report [13] attempts to compare minimum yields v min in the aligned spectra of CuInSe 2 , a basic experimental parameter of ion channeling, with theoretical values and estimate defect concentrations in this material. However in this report only the indium sublattice was analysed whereas the determined defect concentrations were attributed to the whole lattice.…”