Thin Solid Films
 2006
DOI: 10.1016/j.tsf.2005.09.157
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Defect suppression of indium end-of-range during solid phase epitaxy annealing using Si1−yCy in silicon

Chung Foong Tan1,
Eng Fong Chor2,
Hyeokjae Lee3
et al.
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