Defect Symmetry from Stress Transient Spectroscopy

Meese, J. M.; Farmer, J. W.; Lamp, C. D.

doi:10.1103/physrevlett.51.1286

Cited by 52 publications

(16 citation statements)

References 6 publications

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“…The symmetry of VO has been also confirmed by the DLTS measurements combined with the uniaxial stress [2], and recently by the highresolution Laplace DLTS method [10]. The Laplace DLTS peak splitting pattern for the uniaxial stress applied along the main crystallographic directions agrees with the orthorhombic defect symmetry as found in Ref.…”

Section: 3supporting

confidence: 57%

“…When the defect is in the neutral charge state the effective barrier for reconfiguration of the oxygen atom is 0.38eV [2,9,10]. It has been observed that this barrier is reduced by the stress when the stress is applied along the <100> direction.…”

Section: 3mentioning

confidence: 97%

“…The possibility of obtaining the local-symmetry information by the combination with uniaxial-stress was realized to some extent in the early years of deep-level transient spectroscopy [2]. However, only a few studies that actually revealed structural information have been carried out with the application of conventional DLTS.…”

mentioning

confidence: 99%

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Piezospectroscopic analysis of mobile defects in semiconducting materials

Dobaczewski¹,

Peaker

Markevich

et al. 2008

Phys. Status Solidi (c)

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The piezospectroscopic analysis of point defects allows to describe fixed defects embedded in a crystal environment of immobile atoms. This description works well when all atoms vibrate around fixed equilibrium positions and these vibrations are much faster than the time scale of the experiment while the equilibrium positions do not evolve within this time scale. For some defects this condition is not fulfilled at temperatures of the DLTS experiment, which somehow is reflected in a departure from what the theory predicts. On the other hand, systematic discrepancies between results of theoretical piezospectroscopic analysis and experiment can be a valuable source of information about a defect. We discuss how these re‐orientation processes can be identified from the observed piezospectroscopic parameters for a number of defect complexes observed in silicon and germanium with the use of the high‐resolution Laplace Deep Level Transient Spectroscopy. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: 3supporting

confidence: 57%

Section: 3mentioning

confidence: 97%

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Piezospectroscopic analysis of mobile defects in semiconducting materials

Dobaczewski¹,

Peaker

Markevich

et al. 2008

Phys. Status Solidi (c)

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“…Among the first successful applications were the celebrated modeling by Watkins and Corbett 84 and Corbett et al 85 of vacancy-oxygen center (VO) in silicon by EPR and local-mode IR spectroscopy. The center was studied also in early applications of hydrostatic and uniaxial-stress DLTS by Samara 86 and by Meese, Farmer, and Lamp, 87 respectively. The comparison of VO stress data from different experimental techniques reveals features in analysis and interpretation that may be considered as textbook examples.…”

Section: Piezospectroscopic Parameters From Alignment Studiesmentioning

confidence: 99%

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Dobaczewski

Peaker

Nielsen

2004

Journal of Applied Physics

291

181

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We present a comprehensive review of implementation and application of Laplace deep-leve1 transient spectroscopy (LDLTS). The various approaches that have been used previously for high-resolution DLTS are outlined and a detailed description is given of the preferred LDLTS method using Tikhonov regularization. The fundamental limitations are considered in relation to signal-to-noise ratios associated with the measurement and compared with what can be achieved in practice. The experimental requirements are discussed and state of the art performance quantified. The review then considers what has been achieved in terms of measurement and understanding of deep states in semiconductors through the use of LDLTS. Examples are given of the characterization of deep levels with very similar energies and emission rates and the extent to which LDLTS can be used to separate their properties. Within this context the factors causing inhomogeneous broadening of the carrier emission rate are considered. The higher resolution achievable with LDLTS enables the technique to be used in conjunction with uniaxial stress to lift the orientational degeneracy of deep states and so reveal the symmetry and in some cases the structural identification of defects. These issues are discussed at length and a range of defect states are considered as examples of what can be achieved in terms of the study of stress alignment and splitting. Finally the application of LDLTS to alloy systems is considered and ways shown in which the local environment of defects can be quantified.

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“…This technique has been applied [239] to the A-centre, or V-O centre in Si, which is known to have C 2v symmetry [240]. To our knowledge, this technique has only been applied to investigate the symmetry of one TM-related centre in silicon [241].…”

Section: -Levelsmentioning

confidence: 99%