The Interaction of Hydrogen with Deep Level Defects in Silicon

Jones, R.; Coomer, B.J.; Goss, Jonathan P.; Hourahine, B.; Resende, A.

doi:10.4028/www.scientific.net/ssp.71.173

Cited by 60 publications

(39 citation statements)

References 221 publications

(374 reference statements)

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“…It is commonly assumed that the improvement of passivation quality during a firing step is, at least in part, re-lated to a hydrogen passivation of interface states [32], [33]. Accordingly, a loss of hydrogen at higher annealing temperatures as suggested in [34]- [36] or a reconfiguration of hydrogen bonding states [37], [38] could lead to a decrease in surface passivation quality. Such a hydrogen-based degradation mechanism could also explain why a nonfired sample and an annealed sample show significantly less degradation of surface passivation quality compared to a fired sample as described in [14].…”

Section: Discussionmentioning

confidence: 99%

Degradation of Surface Passivation on Crystalline Silicon and Its Impact on Light-Induced Degradation Experiments

Sperber

Graf

Skorka

et al. 2017

IEEE J. Photovoltaics

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Abstract-A decrease of surface passivation quality is observed in FZ, Cz, and mc-Si lifetime samples during light-induced degradation (LID) treatments. It is shown that this degradation occurs not only in samples with single SiN x :H layers but also when using layer stacks consisting of SiO x /SiN x :H or AlO x :H/SiN x :H. Timeresolved calculation of the surface saturation current density J 0 s is shown to be a reliable method to separate changes in the bulk and at the surface of samples during LID treatments. The impact of the observed changes in passivation quality on the outcome and interpretation of LID experiments aiming at changes in the bulk of Cz or mc-Si is investigated and discussed.

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Section: Discussionmentioning

confidence: 99%

Degradation of Surface Passivation on Crystalline Silicon and Its Impact on Light-Induced Degradation Experiments

Sperber

Graf

Skorka

et al. 2017

IEEE J. Photovoltaics

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“…They suggest that this procedure results in a non equilibrium distribution of hydrogen in the silicon sample. Hydrogen molecules at tetrahedral interstitial sites were suggested as main hydrogen configuration after coot down [20,21). For high enough temperatures ( > 170 oc for 30 min tempering steps), hydrogen starts to redistribute with the pre ferred bound state depending on temperature.…”

Section: Influence Of Mid-temperature Steps On Regenerationmentioning

confidence: 99%

“…McQuaid et al showed that tempe ring steps at -200 ·c for 30 min or at -175 ·c for 100 min lead to maximal concentration of boron hydrogen pairs whereas higher temperatures result in decreasing concen trations until virtually no boron hydrogen pairs could be found anymore after 30 min tempering steps above 380 •c jones et al hypothesized that in the latter case hydrogen rather forms more stable hydrogen configurations, e.g. vacancy hydrogen complexes instead of binding to boron [21]. Fig.…”

Section: Influence Of Mid-temperature Steps On Regenerationmentioning

confidence: 99%

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Wilking

Beckh

Ebert

et al. 2014

Solar Energy Materials and Solar Cells

118

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a b s t r a c tRecombination active boron oxygen related defects typically limit the efficiency of solar cells made from boron doped, oxygen rich silicon. This limitation can be overcome by applying a regeneration process that requires slightly elevated temperatures, carrier injection, and the presence of hydrogen in the silicon substrate in order to regenerate quickly and completely.The influence of mid temperature steps up to 400 1C on the regeneration kinetics is investigated and the results can be explained with the efficacy of the regeneration process depending on the hydrogen bonding states prior to regeneration. Boron hydrogen pairs are found to be good candidates to be the relevant hydrogen source during regeneration. The long term stability of the regenerated state is tested under solar cell operating conditions, and the thermal activation energy of its destabilization is determined to be 1.25 70.05 eV.Limiting factors for high speed regeneration processes are discussed, and a high temperature/high illumination procedure is presented, allowing complete regeneration in less than 10 s. This makes regeneration feasible as an in line process in solar cell production.

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“…It reacts especially with strained bonds in vacancies. Consequently, hydrogen has a great effect on centers with deep levels, as these often involve unsaturated Si atoms or possess weak bonds [8]. To evaluate the grown-in defect interaction with impurities on the interface, the EPR signal and the charge value in SiO 2 dependence on the oxide thickness for n-and p-type CZ and FZ samples were investigated (Fig.…”

Section: Resultsmentioning

confidence: 99%

Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties

Kropman

Mellikov

Kärner

et al. 2006

Materials Science and Engineering: B

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The Interaction of Hydrogen with Deep Level Defects in Silicon

Cited by 60 publications

References 221 publications

Degradation of Surface Passivation on Crystalline Silicon and Its Impact on Light-Induced Degradation Experiments

Degradation of Surface Passivation on Crystalline Silicon and Its Impact on Light-Induced Degradation Experiments

Influence of bound hydrogen states on BO-regeneration kinetics and consequences for high-speed regeneration processes

Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties

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