Defect tolerant device geometries for lead-halide perovskites

Das, Basita; Liu, Zhifa; Aguilera, Irene; Rau, Uwe; Kirchartz, Thomas

doi:10.1039/d0ma00902d

Cited by 20 publications

(29 citation statements)

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“…This relation can easily be understood if we consider defectassisted recombination as a two-step capture process of both charge carrier types into the defect. [35,43] The slower of the two capture processes into a defect state determines the recombination rate. A higher lifetime corresponds to lower capture coefficients and slower capture rates.…”

Section: Doped Junctions With Asymmetric Carrier Lifetimesmentioning

confidence: 99%

“…Another effect influencing the electric field distribution in the solar cell is the resistive loss from charge carrier transport. [35,54] In lead halide perovskite absorber layers, the mobilities of electrons and holes are sufficiently high to ignore resistive transport losses in the absorber. [55] However, some organic contact layers suffer from low conductivity.…”

Section: The Concept Of Dielectric Junctionsmentioning

confidence: 99%

“…This acceleration of charge recombination by defects is mathematically described mostly using the Shockley–Read–Hall [ 41,42 ] formalism and is a consequence of the increased probability of phonon‐assisted processes in the presence of deep localized states caused by defects. [ 43 ]…”

Section: Basic Theorymentioning

confidence: 99%

“…This means that recombination rates can be minimized by slowing down the slower of the two capture processes (i.e., either electron and hole capture by the defect). [35] Both of these guiding principles for device design depend on the depth-dependent electrostatic potential, which should be a key design element for efficient solar cells. We highlight that, in addition to the well-known concept of doping, the permittivity affects how the electrostatic potential difference between two contacts will drop over layers with relatively low conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…This means that recombination rates can be minimized by slowing down the slower of the two capture processes (i.e., either electron and hole capture by the defect). [ 35 ]…”

Section: Introductionmentioning

confidence: 99%

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Section: Doped Junctions With Asymmetric Carrier Lifetimesmentioning

confidence: 99%

Section: The Concept Of Dielectric Junctionsmentioning

confidence: 99%

Section: Basic Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…This means that recombination rates can be minimized by slowing down the slower of the two capture processes (i.e., either electron and hole capture by the defect). [ 35 ]…”

Section: Introductionmentioning

confidence: 99%

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Quantifying Efficiency Limitations in All‐Inorganic Halide Perovskite Solar Cells

et al. 2022

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Figure 2. a) Accumulated number of related articles as a function of time for the search strings given in the legend taken from ISI Web of Science. Proportion of all-inorganic perovskite solar cells are also shown. b) Relationship between champion efficiencies and the accumulated number of related articles. c) The champion power conversion efficiencies of all-inorganic perovskite solar cells along with years. The devices are classified into 5 groups by the iodine to bromine ratio quantified via the value of x. The efficiencies of hybrid perovskite solar cells are also shown for comparison. The devices with Sn doping process are not shown in the figures, because the bandgap deviates significantly from the intrinsic values. d) The champion efficiency of different all-inorganic perovskite solar cells compared with the SQ limit. The record efficiency of c-Si, GaAs and hybrid perovskite solar cells are shown for comparison.

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Effect of Doping, Photodoping, and Bandgap Variation on the Performance of Perovskite Solar Cells

Das

Aguilera

Rau

et al. 2022

Advanced Optical Materials

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The most peculiar property, however, is an excellent luminescence quantum efficiency [4][5][6][7][8][9][10] that substantially exceeds that of solution processed polycrystalline films made of other material families. It is this last property that has started extensive investigations into the defect tolerance [11][12][13][14][15] of the material class and has enabled highly efficient light emitting diodes as well as solar cells with open-circuit voltages [7,[16][17][18] that so closely approach the radiative limit that they are only overcome by monocrystalline GaAs solar cells. [19] Halide perovskite devices so far have been made by employing a large library of contact materials [20][21][22][23][24] borrowed from organic solar cells, organic LEDs and dyesensitized solar cells. The key concept of device making is based on the idea that the actual light absorbing or emitting layer is fairly intrinsic and that electron and hole injection or extraction has to be ensured by contacts with suitable work functions, electron affinities and ionization potentials. [25] The classical approach of doping the active layer as done in Si, III-Vs or other inorganic semiconductors has so far only rarely been pursued and currently there is no evidence that a functional perovskite-based pn-junction [26] solar cell or LED can be made using the classical approach. Nevertheless, unintentional doping via shallow intrinsic point defects is an important topic of research, [27] triggered to a large degree by the evidence for mobile ionic charges [28,29] that lead to reversible transient effects and features like the JV curve hysteresis. [29][30][31][32] Mobile ions may appear in Frenkel pairs (i.e., for each positive ion there would be a negative ion) without actually doping the semiconductor by creating an excess of one type of charge. Therefore, it is not entirely obvious whether halide perovskites should be considered as doped semiconductors. Given the typical thicknesses and permittivities, a halide perovskite solar cell would be considered doped from doping densities of roughly >10 16 cm -3 as found in ref [32]. There is clear evidence in the most frequently studied composition methylammonium lead-iodide (MAPI) that the material behaves like an intrinsic semiconductor [33] with extremely low bulk charge densities (<10 12 cm -3 ) measured in thick crystals. [2] Furthermore, in transient photoluminescence of thin films of MAPI, [8] the signature of quadratic radiative recombination has been observed [8] down to (low) charge densities of 10 14 cm -3 , suggesting doping densities that must be even lower. There are a variety of Mott-Schottky Most traditional semiconductor materials are based on the control of doping densities to create junctions and thereby functional and efficient electronic and optoelectronic devices. The technology development for halide perovskites had initially only rarely made use of the concept of electronic doping of the perovskite layer and instead employed a variety of different contact materials to create function...

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Defect tolerant device geometries for lead-halide perovskites

Abstract: The term defect tolerance is widely used in literature to describe materials such as lead-halides perovskites, where solution-processed polycrystalline thin films exhibit long non-radiative lifetimes of microseconds or longer. Studies...

Cited by 20 publications

References 82 publications

Dielectric Junction: Electrostatic Design for Charge Carrier Collection in Solar Cells

Dielectric Junction: Electrostatic Design for Charge Carrier Collection in Solar Cells

Quantifying Efficiency Limitations in All‐Inorganic Halide Perovskite Solar Cells

Effect of Doping, Photodoping, and Bandgap Variation on the Performance of Perovskite Solar Cells

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