Dielectric Junction: Electrostatic Design for Charge Carrier Collection in Solar Cells

Hüpkes, J.; Rau, Uwe; Kirchartz, Thomas

doi:10.1002/solr.202100720

Cited by 9 publications

(7 citation statements)

References 57 publications

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“…In Figure 5c,d, we used a very high permittivity in the perovskite (10 4 ) to emulate [64,65] the situation where the electric field is screened in the active layer due to ionic motion. [66,67] We again observe a nearly constant value of the resistance at low voltages.…”

Section: Charge Carrier Mobilities Of Transport Layersmentioning

confidence: 99%

Fill Factor Losses and Deviations from the Superposition Principle in Lead Halide Perovskite Solar Cells

et al. 2022

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The enhancement of the fill factor in the current generation of perovskite solar cells is the key for further efficiency improvement. Thus, methods to quantify the fill factor losses are urgently needed. Two methods are presented to quantify losses due to the finite resistance of the semiconducting layers of the solar cell as well as its contacts. The first method is based on the comparison between the voltage in the dark and under illumination analyzed at equal recombination current density and results in a voltage‐dependent series resistance. Furthermore, the method reveals the existence of a strong photoshunt under illumination. The second method is based on measuring the photoluminescence of perovskite solar cells as a function of applied voltage. Thereby, the recombination current is determined as a function of voltage from short circuit to open circuit, and the presence of the photoshunt is explained with a high resistance of the electron and/or hole transport layers combined with field screening in the absorber.

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Section: Charge Carrier Mobilities Of Transport Layersmentioning

confidence: 99%

Fill Factor Losses and Deviations from the Superposition Principle in Lead Halide Perovskite Solar Cells

et al. 2022

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“…The reduction of n indicates an increased recombination rate within the bulk compared with the SCR, where p >> Δ n implies lower nonradiative recombination rates. [ 76 ] Additionally, LiAlH 4 treatment implies a reduction by an order of magnitude of J 0 . The latter strongly suggests decreased recombination rates.…”

Section: Resultsmentioning

confidence: 99%

Small Atom Doping: A Synergistic Strategy to Reduce Sn_Zn Recombination Center Concentration in Cu₂ZnSnSe₄

et al. 2022

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“…Furthermore, the impact of ions is treated quite generically in the present paper by assuming that ions screen the electric field in the absorber thereby allowing us to treat the absorber as a field free region with an average Fermi level splitting that is representative of the whole volume of the absorber. [45,55,61] We have experimental evidence to assume that this is a good approximation for the samples under investigation [48] but this may of course be a problematic approximation for other samples and materials. Especially in materials with lower mobilities, the depth dependence of the Fermi level splitting inside the absorber might become a dominant factor in understanding the TPV rise and decay.…”

Section: Discussion and Limitations Of The Proposed Approachmentioning

confidence: 99%

Quantifying Charge Extraction and Recombination Using the Rise and Decay of the Transient Photovoltage of Perovskite Solar Cells

et al. 2023

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The extraction of photogenerated charge carriers and the generation of a photovoltage belong to the fundamental functionalities of any solar cell. These processes happen not instantaneously but rather come with finite time constants, e.g., a time constant related to the rise of the externally measured open circuit voltage following a short light pulse. Herein, a new method to analyze transient photovoltage measurements at different bias light intensities combining rise and decay times of the photovoltage. The approach uses a linearized version of a system of two coupled differential equations that are solved analytically by determining the eigenvalues of a 2 × 2 matrix. By comparison between the eigenvalues and the measured rise and decay times during a transient photovoltage measurement, the rates of carrier recombination and extraction as a function of bias voltage are determined, and establish a simple link between their ratio and the efficiency losses in the perovskite solar cell.

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Dielectric Junction: Electrostatic Design for Charge Carrier Collection in Solar Cells

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/solr.202100720.

Cited by 9 publications

References 57 publications

Fill Factor Losses and Deviations from the Superposition Principle in Lead Halide Perovskite Solar Cells

Fill Factor Losses and Deviations from the Superposition Principle in Lead Halide Perovskite Solar Cells

Small Atom Doping: A Synergistic Strategy to Reduce Sn_Zn Recombination Center Concentration in Cu₂ZnSnSe₄

Quantifying Charge Extraction and Recombination Using the Rise and Decay of the Transient Photovoltage of Perovskite Solar Cells

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Dielectric Junction: Electrostatic Design for Charge Carrier Collection in Solar Cells

Abstract: The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/solr.202100720.

Cited by 9 publications

References 57 publications

Fill Factor Losses and Deviations from the Superposition Principle in Lead Halide Perovskite Solar Cells

Fill Factor Losses and Deviations from the Superposition Principle in Lead Halide Perovskite Solar Cells

Small Atom Doping: A Synergistic Strategy to Reduce SnZn Recombination Center Concentration in Cu2ZnSnSe4

Quantifying Charge Extraction and Recombination Using the Rise and Decay of the Transient Photovoltage of Perovskite Solar Cells

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Small Atom Doping: A Synergistic Strategy to Reduce Sn_Zn Recombination Center Concentration in Cu₂ZnSnSe₄