2018
DOI: 10.1021/acsanm.8b00207
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Defect Variants Based on the 2D Hybrid Organic–Inorganic Low-Dimensional Semiconductor (4-Fluoro-phenethylamine-H)2PbBr4 for Fabrication of Single-Layer Deep Blue LEDs

Abstract: The low-cost and self-assembled hybrid organic–inorganic semiconductors (HOIS) appear lately to be ideal for novel optoelectronic devices due to their inherent stable excitonic states, even at room temperature. 2D HOIS, superlattices of alternating layers of amines and of corner sharing lead halide octahedra, exhibit dielectrically confined bound excitonic states that are ideal for light emitting diodes (LEDs). HOIS-based deep blue LEDs are rarely reported, in which cases HOIS is usually deposited between elec… Show more

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Cited by 7 publications
(3 citation statements)
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“…Compared to PP-2I , FPP-2I ligand contains a fluorine atom on the ortho-position of one of the benzene rings. The fluorine substitution on the organic ligand also aids in the formation of high-quality 2D perovskite thin films. Scanning electron microscopy (SEM) images (Figure S3) were also obtained and show that (PP)­PbI 4 , (FPP)­PbI 4 , and (FPT)­PbI 4 thin films have relatively similar morphologies as (PMA) 2 PbI 4 and are consistent with other 2D-HOIPs in the literature …”
Section: Resultssupporting
confidence: 77%
“…Compared to PP-2I , FPP-2I ligand contains a fluorine atom on the ortho-position of one of the benzene rings. The fluorine substitution on the organic ligand also aids in the formation of high-quality 2D perovskite thin films. Scanning electron microscopy (SEM) images (Figure S3) were also obtained and show that (PP)­PbI 4 , (FPP)­PbI 4 , and (FPT)­PbI 4 thin films have relatively similar morphologies as (PMA) 2 PbI 4 and are consistent with other 2D-HOIPs in the literature …”
Section: Resultssupporting
confidence: 77%
“…The rapid growth of nanoscale semiconductor materials intended for appliances in photovoltaics has motivated the use of new alternatives for solar cell components . This is due to their novel optical properties, which have great potential for many other optoelectronic applications such as light‐emitting diodes (LEDs) . With a wide band gap of 3.37 eV and a low manufacture cost, ZnO semiconductors have been widely employed in sensors, optoelectronic devices, piezoelectric nanogenerators, catalysis and energy harvesting .…”
Section: Introductionmentioning
confidence: 99%
“…[4] This is due to their novel optical properties, which have great potential for many other optoelectronic applications such as light-emitting diodes (LEDs). [6] With a wide band gap of 3.37 eV and a low manufacture cost, ZnO semiconductors have been widely employed in sensors, [7] optoelectronic devices, [8] piezoelectric nanogenerators, catalysis and energy harvesting. [9,10] Compared to the well-developed titanium dioxide (TiO 2 ), nanostructured ZnO exhibits a similar band gap and higher charge mobility.…”
Section: Introductionmentioning
confidence: 99%