Defects in Device Grade Homoepitaxial Diamond Thin Films Grown with Ultra-Low CH4/H2 Conditions by Microwave-Plasma Chemical Vapor Deposition

Takeuchi, Daisuke; Watanabe, Hideyuki; Yamanaka, Sadanori; Okushi, Hideyo; Kajimura, K.

doi:10.1002/(sici)1521-396x(199907)174:1<101::aid-pssa101>3.0.co;2-o

Cited by 42 publications

(4 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The current has a tendency to become higher when the hillock density is higher as shown in this figure. This result supports the above‐mentioned speculation because the hillocks could be originated from some kinds of defects in the i‐layer .…”

Section: Resultssupporting

confidence: 89%

Electrical characterization of diamond PiN diodes for high voltage applications

Suzuki

Sakai

Makino

et al. 2013

Physica Status Solidi (a)

View full text Add to dashboard Cite

Reverse characteristics of diamond PiN diodes were studied under high reverse bias for high voltage applications. We have fabricated vertical diamond PiN diode structures consisting of a phosphorus-doped n-type diamond layer and an undoped intrinsic diamond layer on a heavily boron-doped p-type diamond substrate with Au/Pt/Ti Ohmic contacts on both the top and the bottom surfaces. Temperature dependent currentvoltage (I-V) and capacitance-voltage (C-V) measurements were carried out to reveal the diode characteristics. The fabricated PiN diodes exhibited a sharp and repeatable reverse breakdown with positive temperature dependence indicating an avalanche mechanism. The obtained maximum breakdown field was 2.3 MV cm À1 (920 V) which is comparable to the ideal dielectric breakdown field of SiC. The reverse breakdown field and the leakage current were correlated with the hillock density. This research indicates that robust diamond power devices with high breakdown reliability can be achievable after improvement the quality of the intrinsic layer.

show abstract

Section: Resultssupporting

confidence: 89%

Electrical characterization of diamond PiN diodes for high voltage applications

Suzuki

Sakai

Makino

et al. 2013

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

“…Microwave-plasma-enhanced CVD is a representative method which has been developed widely for high-quality diamond growth. 10,11 Plasma torch using radio frequency discharge or direct current discharge is used to deposit diamond films with high deposition rate. 12 Laserassisted CVD was regarded as a promising way due to its unique means of fast heating 13,14 and selective optical pumping of the reactive species.…”

Section: Introductionmentioning

confidence: 55%

Laser-induced resonant excitation of ethylene molecules in C2H4/C2H2/O2 reactions to enhance diamond deposition

Líu

Sun

Han

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

Vibrational resonant excitation of ethylene ͑C 2 H 4 ͒ molecules using a carbon dioxide laser was employed to promote reactions in precursors of ethylene, acetylene ͑C 2 H 2 ͒, and oxygen to enhance diamond deposition. One of the vibrational modes ͑CH 2 wag mode, v 7 ͒ of the C 2 H 4 molecules was selected to achieve the resonant excitation in the reactions. Optical emission spectroscopy was used to study the effects of laser resonant excitation on the reactions for diamond deposition. The optical emissions of CH and C 2 species were enhanced with the laser excitation, indicating that there are more active species generated in the reactions. Thicknesses and grain sizes of the deposited films were increased correspondingly. Temperature calculations from the line set in the R-branch of CH emission spectra indicated that a nonthermal process is involved in the enhanced diamond deposition.

show abstract

“…In the past decade, diamond films were studied by numerous methods, such as HF-CVD, DC arc jet CVD, DC-PCVD, and HTHP methods [6,7]. The microwave plasma chemical vapor deposition (MPCVD) technique is the only method that synthesizes highquality SCDs (device grade [8]) with an atomically flat surface. However, some critical issues need to be solved before CVD diamond films utilizing in electronic devices.…”

Section: Introductionmentioning

confidence: 99%