Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Zhang, Pengfei; Chen, Weidong; Zhang, Longhui; He, Shi; Wang, Hongxing; Yan, Shuai; Ma, Wen; Guo, Chunxia; Wang, Yanfeng

doi:10.3390/coatings11080888

Cited by 4 publications

(3 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All samples were exposed to the same growth environment with 3.6 kW microwave power, a pressure of 150 Torr and a temperature of 1060 ± 10 °C for a total growth time of 10 h. The methane concentration was 6%, 8%, 10% and 12% diluted in H 2 at a total flow of 200 sccm, as shown in Table 1 . This CH 4 concentration range was chosen based on the conclusions of previous studies on CVD single-diamond growth without nitrogen addition [ 9 , 13 ]. Temperature control was performed by micrometrical positioning of a copper heat exchanger with a servomotor and monitored with a high resolution (0.1 °C) two-color infrared pyrometer (MERGENTHALER LASCON 101 LPC-03, Neu-Ulm, Germany).…”

Section: Methodsmentioning

confidence: 99%

“…Different CVD growth techniques and conditions have been investigated and used to produce high-quality SCD films [ 4 , 5 , 6 , 7 , 8 , 9 ]. The effects of temperature, pressure and holder geometry on the homoepitaxial SCD growth by microwave-assisted chemical vapor deposition were discussed by Widmann et al [ 4 ].…”

Section: Introductionmentioning

confidence: 99%

“…In another recent article, Zhang et al reported the effect of CH 4 /H 2 flow rates varied from 6% to 6.2%, 6.4%, 7% and 8% on the growth of SCDs. It was observed that under the optimized condition of 6.4% methane concentration, the growth rate was 3 µm/h [ 9 ]. The influence of methane concentration on the growth rate and structure of single-crystal CVD diamond has also been discussed in other previous studies [ 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

et al. 2022

View full text Add to dashboard Cite

Single crystal diamond (SCD) is a promising material to satisfy emerging requirements of high-demand fields, such as microelectronics, beta batteries and wide-spectrum optical communication systems, due to its excellent optical characteristics, elevated breakdown voltage, high hardness and superior thermal conductivity. For such applications, it is essential to study the optically active defects in as-grown diamonds, namely three-dimensional defects (such as stacking faults and dislocations) and the inherent defects arising from the cultivation method. This paper reports the growth of SCD films on a commercial HPHT single-crystal diamond seed substrate using a 2.45 GHz microwave plasma-assisted chemical vapor deposition (MWPACVD) technique by varying the methane (CH4) gas concentration from 6 to 12%, keeping the other parameters constant. The influence of the CH4 concentration on the properties, such as structural quality, morphology and thickness, of the highly oriented SCD films in the crystalline plane (004) was investigated and compared with those on the diamond substrate surface. The SCD film thickness is dependent on the CH4 concentration, and a high growth rate of up to 27 µm/h can be reached. Raman spectroscopy, high-resolution X-ray diffractometry (HRXRD), scanning electron microscopy (SEM), surface profilometry and optical microscopic analyses showed that the produced homoepitaxial SCD films are of good quality with few macroscopic defects.

show abstract

Section: Methodsmentioning

confidence: 99%