Defects in single-crystal silicon induced by hydrogenation

Johnson, N. M.; Ponce, Fernando; Street, R. A.; Nemanich, R. J.

doi:10.1103/physrevb.35.4166

Cited by 468 publications

(215 citation statements)

References 14 publications

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“…Here, the peak at 2105 cm −1 is the Si-H stretching mode of platelets. 15,16 On the other hand, the frequency ratios of the remaining peaks at 2283, 2387, and 2470 cm −1 to those at 1694, 1771, and 1854 cm −1 , respectively, are about 1.33-1.35. These values are too low to be within the range of the values for the Si-H bonds.…”

Section: A H and B Related Raman Peaksmentioning

confidence: 99%

“…6 Hydrogen passivation of B in Si is very efficient because the Coulomb attraction between interstitial H + and B − results in a very large capture radius. 7 Thus, almost all B in Si can be passivated by H. 8,9 With increasing concentration of H, hydrogen molecules [10][11][12][13][14] and extended planar defects called platelets 9,15,16 are formed. Furthermore, additional H-͓or deuterium ͑D͔͒ related Raman peaks are observed in the range of 1900-2300 ͑1300-1700͒ cm −1 .…”

Section: Introductionmentioning

confidence: 99%

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Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

et al. 2005

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The formation of hydrogen ͑H͒ related complexes and their effect on boron ͑B͒ dopant were investigated in B-ion implanted and annealed silicon ͑Si͒ substrates treated with a high concentration of H. Isotope shifts by replacement of 10 B with 11 B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

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Section: A H and B Related Raman Peaksmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

et al. 2005

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“…[40] These H-platelets turn out to be the nuclei of the H 2 -gas bubbles, which lead to ion-cutting in H-implanted material. This will be discussed in detail in chapter 5.…”

Section: The Silicon-hydrogen System: a Literature Reviewmentioning

confidence: 99%

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer

2001

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ZusammenfassungDer sogenannte "Ion-Cut", ein Schichtabspaltungsprozess mittels WasserstoffIonenimplantation und darauffolgender Probenerwärmung ist eine effektive, vielseitige und ökonomische Methode, um Siliziumschichten mit einer Dicke von nur einigen Nanometern von einem Siliziumsubstrat auf andere Materialien zu transferieren. Somit ermöglicht der Ion-Cut die Produktion von Siliziumschichen auf isolierenden Materalien ("silicon-on-insulator" (SOI) AbstractThe "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H 2 -gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

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“…21 The other peaks at 1931, 2105, 2134, 2222, and 2241 cm −1 are due to Si-H stretching modes of defects formed by hydrogenation. 21 Notably, the peak at 2134 cm −1 is due to the Si-H stretching mode of platelets, 16,17,22 which are known as hydrogen-related planar defects in Si. Hereaf- ter, we term these defects related to Si-H stretching modes "Si-H defects" except for the platelet defects.…”

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confidence: 99%

“…On the other hand, in n-type P-doped Si, the H atom is located at the anitibonding ͑AB͒ site of the nearest Si neighbor to a P atom, forming a P-Si-H passivation center. [3][4][5]7,9 In addition to the passivation centers, hydrogen molecules [11][12][13][14][15] and extended planar defects called platelets 16,17 are formed with increasing H concentration introduced into Si. The formation of hydrogen molecules and platelets also depends on the types of dopant impurities in Si.…”

mentioning

confidence: 99%

Dopant dependence on passivation and reactivation of carrier after hydrogenation

Fukata

Sato

Morihiro

et al. 2007

Journal of Applied Physics

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The formation of hydrogen ͑H͒-related complexes and H effects on boron ͑B͒ and phosphorus ͑P͒ dopants was investigated in B-or P-doped silicon ͑Si͒ crystal treated with high concentration of H. The reactivation process of dopant carriers by annealing after hydrogenation was significantly different between the p-type and n-type specimens. The difference is likely to be attributable to the formation of H-related defects based on the stable sites of the H atoms, i.e., complicated H multiple trapping centers are formed by bond breaking due to H atoms in only p-type B-doped Si.

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Defects in single-crystal silicon induced by hydrogenation

Cited by 468 publications

References 14 publications

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Dopant dependence on passivation and reactivation of carrier after hydrogenation

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