2019
DOI: 10.1016/j.mtener.2019.01.010
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Defining the composition and electronic structure of large-scale and single-crystalline like Cs2AgBiBr6 films fabricated by capillary-assisted dip-coating method

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Cited by 32 publications
(30 citation statements)
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“…S6). While the WF value of undoped Cs2AgBiBr6 is found at 5.07 eV, in agreement with previous reports on Cs2AgBiBr6 highly crystalline thin films, 10 a 50 meV shift toward smaller values (higher Fermi level) is found for the Eu-doped sample (a small variation is found also for the Yb-doped one, i.e. a small broadening of the overall Gaussian distribution at the lower energy limit).…”
supporting
confidence: 92%
“…S6). While the WF value of undoped Cs2AgBiBr6 is found at 5.07 eV, in agreement with previous reports on Cs2AgBiBr6 highly crystalline thin films, 10 a 50 meV shift toward smaller values (higher Fermi level) is found for the Eu-doped sample (a small variation is found also for the Yb-doped one, i.e. a small broadening of the overall Gaussian distribution at the lower energy limit).…”
supporting
confidence: 92%
“…reported on limiting factors in complete solar cells, revealing that one factor hampering the solar cell efficiency is a small electron diffusion length while the hole‐diffusion length is rather large. [ 37 ] Much effort has been put into the optimization of crystallinity and orientation of thin films of Cs 2 AgBiBr 6 , [ 20,38 ] as well as interface modifications, [ 23,39,40 ] the improvement of the optoelectronic properties of single crystals [ 41,42 ] or regarding the origin of the photoluminescence (PL). [ 43,44 ] Yet, there is still no consensus on how to exactly interpret the absorption and emission features [ 44,45 ] and how to explain the severe differences between reported optical data of nominally the same material.…”
Section: Introductionmentioning
confidence: 99%
“…To achieve a high crystallite orientation, as well as a rather high crystallinity of the thin films, either complicated syntheses have to be used, or the presence of (nondetrimental) secondary phases has to be accepted. [ 26,45 ] Also, additive addition has proven to improve the thin film crystallinity. [ 61–63 ] The highest PCE using an antisolvent was achieved by Gao et al for a planar heterojunction in n–i–p architecture.…”
Section: The Role Of Fabrication Methodsmentioning
confidence: 99%
“…[ 28 ] On the other hand, n‐type behavior has been found by photoelectron spectroscopy measurements on single crystals. [ 45 ] To explain higher internal quantum efficiencies for light absorbed closer to the n‐contact, [ 24,28 ] low electron diffusion length/mobility, or the mentioned high p‐type doping could be an explanation at first glance. However, these explanations are not consistent with a photocurrent (internal quantum efficiency [IQE]) that hardly depends on voltage, the decent fill factors (FFs), and strong luminescence quenching in devices.…”
Section: Doubling the Efficiency From 3% To 6%: Device Optimization—c...mentioning
confidence: 99%