The eects of alloying with 0.5, 1.0, and 2.0 at.% Nb on oxidation resistance of MoSi2 are investigated at temperature range of 1400• C1700• C. Rapid formation of a stable protective layer of silica resulted in a parabolic oxidation rate. The oxide layer thickness and the sample weight increased with increasing oxidation time. Impurities accelerated oxidation rate of MoSi2 only slightly, however, did not aect the rate controlling mechanism for oxidation. There was no correlation between oxidation rate and the amount of impurity. The values of activation energies for oxidation of pure MoSi2 and Nb-alloyed samples were similar to activation energy for diusion of O2 through silica. Diusion of O2 through the oxide scale remained the rate controlling mechanism with or without Nb impurity.