Degeneration of CMOS Power Cells After Hot-Carrier and Load Mismatch Stresses

Liu, Chien-Hsuan; Wang, Ruey-Lue; Su, Yan–Kuin; Tu, Chih-Ho; Juang, Ying‐Zong

doi:10.1109/led.2008.2001700

Cited by 8 publications

(8 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…That is, the drain current of the PA degrades with the injection of hot carriers. This means that degradation of the DC current is accelerated under RF stress, which is also consistent with the results reported in [17].…”

Section: A DC Currentsupporting

confidence: 91%

“…Besides the earlier discussion and analysis, we believe that one of the main reasons for the degradation of the critical specifications of the PA due to the introduction of RF stress is the hot carrier injection, which is also consistent with the results reported in the literature [17]. However, there is another possible cause in addition to the hot carrier injection caused by the introduction of RF stress.…”

Section: Power Added Efficiencysupporting

confidence: 91%

“…One possible reason RF stress can accelerate the DC degradation of the PA is that the carriers in the channel receive more energy under RF stress, making their average energy greater, thus leading to more hot-carrier injection [17]. As a result, the threshold voltage will increase with hot carrier injection [18].…”

Section: A DC Currentmentioning

confidence: 99%

See 2 more Smart Citations

An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

Zhou

Jian

2021

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

To accelerate the degradation of critical specifications of CMOS power amplifiers (PAs), this paper proposes a new measurement method that introduces radio frequency (RF) stress in the thermal shock test of CMOS PAs. The experimental results show that the proposed method is effective. The degradation of key PA specifications such as output power and power-added efficiency can accelerate under RF stress. Its degradation speed is faster than that under no RF stress. Possible reasons for the degradation of crucial PA specifications accelerated by RF stress are discussed and analyzed in detail in this paper. The method proposed in this paper can effectively reduce the measurement time and cost to study the degradation of critical specifications of the CMOS-based PA. This method can be used for scientific research on the performance degradation of microwave/RF circuits and devices and aging experiments of electronic products before they leave the factory.INDEX TERMS Thermal shock test, radio frequency stress, CMOS power amplifier, performance degradation.

show abstract

Section: A DC Currentsupporting

confidence: 91%

Section: Power Added Efficiencysupporting

confidence: 91%

See 1 more Smart Citation

An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

Zhou

Jian

2021

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

show abstract

“…For the PA performance degradation, threshold voltage shift is more important than mobility degradation [14]. Note that highinput-power RF stress could result in more degradation in hotelectron effect than that under dc stress [15].…”

Section: Physical Insight Through the Mixed-mode Device And Circumentioning

confidence: 99%

Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability

Yuan

Yen

Chen

et al. 2012

IEEE Trans. Device Mater. Relib.

Self Cite

View full text Add to dashboard Cite

Abstract-A cascode class-E power amplifier (PA) operating at 5.2 GHz has been designed using Advanced Design System simulation. RF circuit performances such as output power and power-added efficiency before and after RF stress have been experimentally investigated. The measured output power, power-added efficiency, and linearity after high-input-power RF stress at elevated supply voltage show significant circuit degradations. The impact of hot-carrier injection and gate oxide soft breakdown on cascode class-E PA reliability is discussed.Index Terms-Cascode class E, gate oxide breakdown, output power, power amplifier (PA), power efficiency, reliability.

show abstract

“…But the parasitic effect would shift the condition of power match. In [8], we had studied the performance degradation induced by load mismatch stress in the cell of 10 mW. The degree of degradation in performance increased obviously with the increasing stress time.…”

Section: Introductionmentioning

confidence: 99%

The Layout Geometry Dependence of the Power Cells on Performances and Reliability

Wang

Liu

et al. 2010

IEEE Microw. Wireless Compon. Lett.

Self Cite

View full text Add to dashboard Cite

The performances and reliability of the NMOS power cells for power amplifiers (PA) were proposed. The performances of power cells with different layout geometries have been compared. The drain current degradation of the NMOS transistors due to hot-carrier effect and high RF power stresses induced by the load impedance mismatches was also present in this work. The load mismatch factors at fundamental, second-order, and third-order frequencies were analyzed to quantify the power mismatch. The cells were fabricated by a 0.18 m CMOS process.All of the characteristics of the devices were measured at 5.2 GHz.Index Terms-Hot-carrier effect, load-pull system, RF stress.

show abstract

Degeneration of CMOS Power Cells After Hot-Carrier and Load Mismatch Stresses

Cited by 8 publications

References 7 publications

An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier

Experimental Verification of RF Stress Effect on Cascode Class-E PA Performance and Reliability

The Layout Geometry Dependence of the Power Cells on Performances and Reliability

Contact Info

Product

Resources

About