Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation

Sun, Yabin; Liu, Ziyu; Fu, Jun; Shi, Yanling; Li, Xiaojin

doi:10.1016/j.radphyschem.2019.108433

Cited by 5 publications

(3 citation statements)

References 21 publications

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“…Then, these shallow acceptor defects are occupied with the desired charge state and act as effective recombination centers, which are similar to deep-level defects. Thus, when the injection level increases, both shallow-level and deep-level defects can decrease the carrier lifetime, which decreases IC in the high-VBE region [10], [22].…”

Section: Experimental Results and Analysismentioning

confidence: 99%

“…The studied results indicate that the interface traps in the baseemitter junction and trapped positive charge in the space oxide induced by TID increased the base recombination current and degraded the DC current gain degradation. Meanwhile, the displacement damage defect characteristics in Si BJTs and SiGe HBTs induced by heavy ions [10], [11] and steady neutrons [12]- [15] were reported. These investigations deduced that the minority carrier lifetime of the experimental samples was decreased by the vacancy defects and trapping centers, which were introduced by displacement damage, and the current gain was degraded.…”

Section: Introductionmentioning

confidence: 99%

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Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Li¹,

Liu

et al. 2021

IEEE Access

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The degradation characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) under different bias modes (forward, cutoff and saturation) during irradiation were reported after multiple pulsed neutron-gamma irradiation at room temperature. The radiation-sensitive parameters of the test samples, including base current IB, collector current IC and DC current gain β, were measured and compared before and after every reactor n-γ pulse irradiation. The test results show that IB increased with increasing fluence, and IC slightly increased in the low base-emitter voltage VBE region (approximately from 0.4 V to 0.5 V) and decreased in the high-VBE region (approximately VBE>0.5 V). Moreover, the degradation degree of the test samples was different under different bias conditions. The performance of the test samples under cutoff bias mode displayed the most serious degradation, while those under forward bias mode suffered minimum damage. Meanwhile, the time-dependent annealing characteristics of the DC current gain for SiGe HBTs at various bias conditions were compared and analyzed.

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Section: Experimental Results and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Li¹,

Liu

et al. 2021

IEEE Access

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show abstract

“…This was attributed to the annealing effect in the device. as the X-ray irradiation time increased, which compensated for some performance loss, and the degree of recovery over a period may vary depending on the temperature and the irradiation time [39][40][41][42][43]. Table 1 summaries the TID-induced changes in performance metrics under different total doses.…”

Section: Performance Degradation and Small-signal Modelingmentioning

confidence: 99%

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

Kim,

Ryu,

Lee

et al. 2024

Electronics

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In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (NF) were derived for analyzing TID-induced degradations in the circuit-level performance. To study radiation effects in circuits, the SiGe-RF-LNAs fabricated in a commercial 350 nm SiGe technology were exposed to 10-keV X-rays to a total ionizing dose of up to 3 Mrad(SiO2). The TID-induced performance changes of the LNA were modeled by applying degradation to device parameters. In the modeling process, new parameter values after irradiation were estimated based on information in the literature, without direct measurements of SiGe HBTs used in the LNA chip. As a result, the relative contributions of parameters on the circuit metrics were compared, identifying dominant parameters for degradation modeling. For the TID effects on input matching (S11) and NF, the base resistance (RB) and the base-to-emitter capacitance (Cπ) of the input transistor were mostly responsible, whereas the transconductances (gm) played a key role in the output matching (S22) and gain (S21). To validate the proposed approach, it has been applied to a different LNA in the literature and the modeling results predicted the TID-induced degradations within reasonable ranges.

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A novel radiation-dependence model of InP HBTs including gamma radiation effects

Zhang,

Cai,

et al. 2023

Nuclear Engineering and Technology

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Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation

Cited by 5 publications

References 21 publications

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions

Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers

A novel radiation-dependence model of InP HBTs including gamma radiation effects

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