Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates

Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

“…Virmontois et al [8,9] reported the displacement damage effects on the dark current of CISs induced by proton and neutron irradiation, and empirical models were established in order to evaluate the dark current distribution. Wang et al [10,11] reported the TID effects on CISs. The mean dark signal, dark signal non-uniformity (DSNU), dynamic range and output signal voltage versus the TID were presented, and the degradation mechanisms were also analyzed.…”

“…The radiation tests were carried out at Xi'an pulse reactor facility. The CIS was exposed to 1 MeV of neutron-equivalent fluence of 1×10 11 and 2×10 11 n/cm 2 . The geometry model of the CIS was established, and the displacement damage dose (D d ) in the space charge region caused by neutron was calculated by Geant4 1) [12], a three-dimensional Monte Carlo code.…”

Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors

“…Although many studies investigated the radiation effects in CISs [1][2][3][4][5][6][7][8][9], few studies focused on the comparison of the dark signal degradations in PPD (pinned photodiode) CISs induced by cobalt-60 Gamma ray, proton, and neutron radiation.…”

Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods

“…Belloir et al [4] have reported the neutron, proton, and heavy ion radiation effects on the dark current spectroscopy of CISs. Wang et al [5][6][7] have presented results on neutron and γ rays radiation effects on CISs. The TID and DD damage effects on CISs have been analyzed in detail.…”

“…Mechanism. The dark current is the signal response when the CIS is not exposed to light [7]. The dark current mainly includes the bulk diffusion, surface leakage, and bulk currents [8].…”