Degradation and self-repairing in perovskite light-emitting diodes

Teng, Peng; Reichert, Sebastian; Xu, Weidong; Yang, Shih‐Chi; Fu, Fan; Zou, Yatao; Yin, Chunyang; Bao, Chunxiong; Karlsson, Max; Liu, Xianjie; Qin, Jiajun; Yu, Tao; Tress, Wolfgang; Yang, Ying; Deibel, Carsten; Gao, Feng

doi:10.1016/j.matt.2021.09.007

Cited by 64 publications

(69 citation statements)

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“…[182] Teng et al also pointed out that the interfacial PEAI could eliminate halide vacancies and function as a blocking layer for ion penetration into the CTLs. [237] The influence of ammonium cations with various benzene rings on the passivation effect has been investigated, and diphenylpropylammonium chloride was discovered to have the strongest coordination with chlorine ions due to electrostatic interaction, greatly suppressing halide migration in mixed-halide perovskites. [238] Moreover, polymerization of 4-vinylbenzylammonium in the perovskite lattice stabilized lattice structure by reducing ion vibration of the metal-halide octahedron and increasing lattice rigidity.…”

Section: Amines and Ammonium Halidesmentioning

confidence: 99%

Ion Migration in Perovskite Light‐Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

et al. 2022

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sivation), [18,19] the record EQEs of PeLEDs have reached 12.3%, [20] 28.1%, [21] 23%, [22] and 22.2% [23] for blue, green, red, and infrared emission, respectively. Despite the remarkable progress in improving the performance of PeLEDs, the devices still suffer from poor operational stability and rapid decay over time. Although encapsulation of the devices can protect them against moisture and oxygen, [24] internal heat-or electric field-driven defect generation processes, which are often linked to ion migration, could cause severe degradation of electroluminescence.Ion motion in MHPs was initially observed in perovskite solar cells (PSCs) and manifested as an anomalous dielectric response at low frequency and hysteresis in the current-voltage curve. [25] Extensive studies have been performed to investigate the properties of the ions, [25,26] the ion distribution in PSCs under dark and illumination, [27] and the electronic-ionic coupling and its impact on device operation. [28] PSCs differ from PeLEDs in that the fabrication of PeLEDs typically involves the use of largely excess organic halide salts; a portion of these halides do not participate in the perovskite lattice but instead reside on the surfaces and grain boundaries, thus inducing additional mobile ions in the PeLEDs. [29][30][31] More importantly, the electric field across the very thin perovskite layer (typically tens of nanometers) in a PeLED is much stronger than the field in a PSC. Because of these factors and the effects of local heating, ion migration has a substantial effect on PeLEDs operation. Indeed, numerous recent studies have reported ion-induced degradation of PeLEDs. [31][32][33][34][35][36] Accordingly, many studies on understanding, characterizing, and preventing ion generation and migration in PeLEDs have been performed in the last few years.Herein, we perform a systematic review of the origin, movement mechanism, characterization, effects on device performance and stability, and management of ion migration in PeLEDs. As presented in Scheme 1, the review begins by introducing the origins of ionic defects by considering the structural, compositional, and processing characteristics of perovskite emissive layers. Then, the transport dynamics of ions are described with a focus on three factors: Migration activation energy, external stimulus (e.g., electric field and Joule heating), and pathways (i.e., bulk vs grain boundaries or surfaces). Third, the characterization approaches for probing ion migration in In recent years, perovskite light-emitting diodes (PeLEDs) have emerged as a promising new lighting technology with high external quantum efficiency, color purity, and wavelength tunability, as well as, low-temperature processability. However, the operational stability of PeLEDs is still insufficient for their commercialization. The generation and migration of ionic species in metal halide perovskites has been widely acknowledged as the primary factor causing the performance degradation of PeLEDs. Herein, this topic is systematically d...

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Section: Amines and Ammonium Halidesmentioning

confidence: 99%

Ion Migration in Perovskite Light‐Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

et al. 2022

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“…Lead halide perovskites have received extensive attention in the field of light-emitting diodes (LEDs) due to their efficient radiative recombination, wide luminous color gamut, and high color purity. − The quasi-two-dimensional (quasi-2D) perovskite with a self-assembled multiple quantum wells (QWs) structure proves to be one of the great light emitters, which possesses high exciton binding energy ( E b ) and an efficient energy-funnel effect that appealing to application in perovskite light-emitting diodes (PeLEDs) and lasers. − The PeLEDs based on quasi-2D perovskites have obtained remarkable external quantum efficiencies (EQEs) of >20% for green and red PeLEDs and 10% for blue devices. − Meanwhile, the efficient quasi-2D perovskite emitters can be prepared by simple one-step solution processing and demonstrate great potential for low-cost and flexible lighting and display. During solution processing, thermal annealing is an indispensable procedure in the preparation of perovskite films to remove residual solvent and promote crystallization.…”

mentioning

confidence: 99%

Engineering of Annealing and Surface Passivation toward Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes

Zhang

Zhan

et al. 2021

J. Phys. Chem. Lett.

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Solution-processed quasi-two-dimensional (quasi-2D) perovskites with selfassembled multiple quantum well (QW) structures exhibit enhanced exciton binding energy, which is ideal for use as light emitters. Here, we have found that postannealing is important to promoting the QWs' composition transfer, and we explored the correlation among the annealing time, the external quantum efficiency (EQE), and the operational stability of the device. During thermal annealing, the low-n QWs will gradually convert to high-n phases, accompanied by an increase in grain size. The EQE and working stability of the device exhibit different annealing-time dependences; that is, with the extension of the annealing time, the EQE gradually decreases while the working stability improves. By introducing trimethylolpropane trimethacrylate (TPTA) to passivate the emitting-region defects, the annealing-time dependence of the EQE was effectively eliminated due to the reduction of the nonradiative recombination rate, wherefore high efficiency and stability can be achieved simultaneously. Our research provides an effective way to develop highly efficiency and stable perovskite light-emitting diodes.

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“…EQE was measured to be 6% and 9% for the FAPbI 3 coated on the pristine and BDP modified SnO 2 ETL, respectively, which was increased to 10% and 14% for the PCD PeLEDs based on the SnO 2 and SnO 2 /BDP substrates, respectively (figure 7(d)). Table 1 provides a detailed comparison on the current advancement in the FAPbI 3 perovskites PeLEDs concluding the performance of our device and recent state-of-the-art PeLEDs [43][44][45][46][47][48][49][50][51][52][53][54]. The optimized devices also showed reduced efficiency roll-off compared to the reference with no modification and additive (figure 7(d)).…”

Section: Core-shell Carbon Polymer Dots As Perovskite Additivesmentioning

confidence: 81%

Core–shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

Tountas

Soultati²,

Armadorou³

et al. 2022

J. Phys. Photonics

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High-performance perovskite light-emitting diodes (PeLEDs) require a high quality perovskite emitter and appropriate charge transport layers to facilitate charge injection and transport within the device. Solution-processed n-type metal oxides represent a judicious choice for the electron transport layer (ETL); however, they don’t always present suitable surface properties and energetics in order to be compatible with the perovskite emitter. Moreover, the emitter itself exhibits poor nanomorphology and defect traps that compromise the device performance. Here we modulate the surface properties and interface energetics of the tin oxide (SnO2) ETL with the perovskite emitter by using an amino functionalized difluoro{2-[1-(3,5-dimethyl-2H-pyrrol-2-ylidene-N)ethyl]-3,5-dimethyl-1H-pyrrolato-N}boron (BDP) compound and passivate the defects present in the perovskite with carbon-polymer core-shell quantum dots (PCDs) inserted into the perovskite precursor. Both these approaches synergistically improve the perovskite layer nanomorphology and enhance the radiative recombination. These properties resulted in the fabrication of near infrared (NIR) PeLEDs based on formamidinium lead iodide (FAPbI3) with a high radiance of 92 W sr-1 m-2, an external quantum efficiency (EQE) of 14% and reduced efficiency roll-off.

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Degradation and self-repairing in perovskite light-emitting diodes

Cited by 64 publications

References 50 publications

Ion Migration in Perovskite Light‐Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

Ion Migration in Perovskite Light‐Emitting Diodes: Mechanism, Characterizations, and Material and Device Engineering

Engineering of Annealing and Surface Passivation toward Efficient and Stable Quasi-2D Perovskite Light-Emitting Diodes

Core–shell carbon-polymer quantum dot passivation for near infrared perovskite light emitting diodes

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