Degradation mechanism of Schottky diodes on inductively coupled plasma-etched <i>n</i>-type 4H-SiC

Choi, Kyoung Jin; Han, Sang Youn; Lee, Jong‐Lam

doi:10.1063/1.1581347

Cited by 13 publications

(5 citation statements)

References 14 publications

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“…Inductively coupled-plasma (ICP) etching can offer significant advantages with respect to RIE in terms of surface damage, due to lower ion energies and the higher plasma densities. However, even ICP causes degradation of the contact properties, as recently reported for Ta/4H-SiC diodes [15], due to the generation of deep levels in the material gap. A significant improvement of the electrical characteristic of Ni contacts was achieved in our group by annealing the devices at 600°C [14], as shown in Fig.…”

Section: Processing Induced Defectsmentioning

confidence: 77%

Silicon Carbide: Defects and Devices

Roccaforte

Franco

Giannazzo

et al. 2005

SSP

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In this paper, some basic aspects related to defects and SiC devices performances are discussed. Our recent work is reviewed and inserted in the international research scenario. In particular, some issues relative to rectifying metal/SiC contacts will be treated in more detail. In fact, establishing a correlation between material defects, processing induced defects and irradiation induced defects with the electrical behaviour of Schottky contacts is extremely important for the future optimization of almost all electronic devices, sensors and particle detectors.

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Section: Processing Induced Defectsmentioning

confidence: 77%

Silicon Carbide: Defects and Devices

Roccaforte

Franco

Giannazzo

et al. 2005

SSP

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“…Data are taken from Refs. [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ].…”

Section: Figurementioning

confidence: 99%

Materials and Processes for Schottky Contacts on Silicon Carbide

2021

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Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.

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“…Therefore, it is very important to understand the nature of such non-ideal behaviour, investigating to which extent the material quality and/or the surface preparation play a role in the carrier transport through the interfaces. Table 2 reports the values of the SBH ( B ) for different metal/SiC contacts, for the most common polytypes, 3C-SiC [16][17][18], 6H-SiC [19][20][21][22][23][24][25][26] and 4H-SiC [27][28][29][30][31][32][33][34][35][36]. These values are a selection among a large amount of published data.…”

Section: Nanoscale Inhomogeneity Of Schottky Barriers To N-type Sicmentioning

confidence: 99%

Nanoscale transport properties at silicon carbide interfaces

Roccaforte¹,

Giannazzo²,

Raineri³

2010

J. Phys. D: Appl. Phys.

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Abstract. Wide band gap semiconductors promise devices with performances not achievable using silicon technology. Among them, Silicon Carbide (SiC) is considered the top-notch material for a new generation of power electronic devices, ensuring the improved energy efficiency requested in the modern society. In spite of the significant progresses achieved in the last decade in the material quality, there are still several scientific open issues related to the basic transport properties at SiC interfaces and ion-doped regions that can affect the devices performances, keeping them still far from their theoretical limits. Hence, significant efforts in fundamental research at nanoscale have become mandatory to better understand the carrier transport phenomena, both at surfaces and interfaces. In this paper, the most recent experiences on nanoscale transport properties will be addressed, reviewing the relevant key points for the basic devices building blocks. The selected topics include the major concerns related to the electronic transport in metal/SiC interfaces, to the carrier concentration and mobility in ion-doped regions, and to channel mobility in metal/oxide/SiC systems. Some aspects related to interfaces between different SiC polytypes are also presented. All these issues will be discussed considering the current status and the drawbacks of SiC devices.

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Degradation mechanism of Schottky diodes on inductively coupled plasma-etched n-type 4H-SiC

Cited by 13 publications

References 14 publications

Silicon Carbide: Defects and Devices

Silicon Carbide: Defects and Devices

Materials and Processes for Schottky Contacts on Silicon Carbide

Nanoscale transport properties at silicon carbide interfaces

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