Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Marona, Ł.; Wiśniewski, P.; Prystawko, P.; Grzegory, I.; Suski, T.; Porowski, S.; Perlin, P.; Czernecki, R.; Leszczyński, M.

doi:10.1063/1.2204845

Cited by 78 publications

(47 citation statements)

References 16 publications

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“…k was found to vary between 0.3 and 0.5, which is consistent with previous studies suggesting that degradation is due to a defects-impurities diffusion process in the active region, with subsequent worsening of the optical properties of the device [2,3]. On the other hand, no strong modification was detected in the slope efficiency of the samples during aging, as shown in Fig.…”

Section: Methodssupporting

confidence: 93%

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Marioli

Meneghini

Rossi

et al. 2015

Physica Status Solidi (a)

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This paper presents a detailed analysis of the degradation kinetics and of the reliability of state-of-the-art InGaN-based green laser diodes (LDs), submitted to CW stress tests at different operating conditions. Results described in the following indicate that: (i) constant current stress induces an increase in threshold current (Ith), which is well correlated to a decrease in the sub-threshold emission; (ii) the Ith increase has a power law dependence on stress time; (iii) the degradation rate is strongly dependent on the stress current level while it does not significantly depend on the optical field in the cavity; (iv) stress temperature acts as an accelerating factor for LDs degradation; the activation energy of the degradation process is equal to 258 meV; (v) pure thermal storage does not induce a significant degradation of device characteristics. Cathodoluminescence measurements were carried out to get more insight into the physical origin of the degradation process

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Section: Methodssupporting

confidence: 93%

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Marioli

Meneghini

Rossi

et al. 2015

Physica Status Solidi (a)

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“…It has been shown that stress determines the increase of the threshold current of the devices [2,3] according to the square-root of the stress time [4]. Degradation has been ascribed to the worsening of the properties of the active layer, possibly due to point defects [5] and/or to modifications of the properties of the acceptor dopant [6].…”

mentioning

confidence: 99%

Analysis of the role of current in the degradation of InGaN‐based laser diodes

Meneghini

Trivellin

Meneghesso

et al. 2009

Phys. Status Solidi (c)

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This paper presents an analysis of the role of current in the long‐term degradation of InGaN‐based laser diodes (LDs). The analysis has been carried out by means of a wide set of stress tests under different driving conditions. During stress, the optical and electrical characteristics of the samples have been continuously monitored, with the aim of determining the physical mechanisms responsible for degradation and the dependence of the degradation rate on the driving conditions. The results reported in this paper demonstrate that: (i) constant current stress determines the increase of the threshold current of the devices, that is well related to the decrease of the sub‐threshold emission; (ii) stress induces the increase of the reverse current of the devices, but does not affect their forward‐bias characteristics; (iii) degradation rate has an almost linear dependence on stress current level; (iv) degradation takes place also below lasing threshold and for very low stress current levels, i.e. with very limited optical field levels. The results described in this paper indicate that the degradation kinetics are mostly determined by the stress current level used during operation: optical field and temperature are thought to play only a minor role in determining the degradation rate. Furthermore, the strong correlation between the threshold current increase and the sub‐threshold emission decrease suggests that degradation can be ascribed to the increase of the non‐radiative recombination rate in the active region of the devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In GaN, gallium vacancies (V Ga ) and vacancy complexes form deep levels in the band-gap, [44,81,82] cause non-radiative recombination, [83] contribute to sub-bandgap optical absorption, [42] compensate n-type doping, [40] and have been associated with device degradation. [82,[84][85][86] Recently the formation of helical dislocations during heat treatment of ammonothermal GaN was associated with interaction of dislocations and vacancy defects. [45] The properties of gallium vacancies and their complexes with hydrogen (V Ga -H) have been calculated from first principles.…”

Section: Gallium Vacancies and Vacancy Clustersmentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals

Cited by 78 publications

References 16 publications

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Degradation mechanisms and lifetime of state‐of‐the‐art green laser diodes

Analysis of the role of current in the degradation of InGaN‐based laser diodes

Defects in Single Crystalline Ammonothermal Gallium Nitride

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