Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

Buffolo, Matteo; Pietrobon, Marika; Santi, Carlo De; Samparisi, Fabio; Davenport, Michael; Bowers, John E.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

doi:10.1016/j.microrel.2018.06.058

Cited by 10 publications

(3 citation statements)

References 8 publications

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“…This is important because ables lower cost, non-hermetic packaging. The central role of the epitaxy, rather tha rors, in heterogeneous devices degradation was further demonstrated in [29], whe authors showed loop-mirror LDs featuring the same III-V structure of the lasers ana in [15] exhibited similar degradation modes.…”

Section: Reliability Of Heterogeneous Iii-v Lasers On Soi Substratesmentioning

confidence: 93%

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

et al. 2021

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With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, and InAs quantum-dot lasers epitaxially grown on silicon. A comprehensive analysis of the reliability-oriented literature published to date reveals that state-of-the-art heterogeneous laser sources share with conventional laser diodes their major epitaxy-related degradation processes, such as the generation of non-radiative recombination centers or dopant diffusion, while eliminating cleaved facets and exposed mirrors. The lifetime of InAs quantum dot lasers grown on silicon, whose development represents a fundamental step toward a fully epitaxial integration of future photonic integrated circuits, is strongly limited by the density of extended defects, mainly misfit dislocations, protruding into the active layer of the devices. The concentration of such defects, along with inefficient carrier injection and excessive carrier overflow rates, promote recombination-enhanced degradation mechanisms that reduce the long-term reliability of these sources. The impact of these misfits can be largely eliminated with the inclusion of blocking layers.

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Section: Reliability Of Heterogeneous Iii-v Lasers On Soi Substratesmentioning

confidence: 93%

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

et al. 2021

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“…Clearly, during condition (A) the two parameters are not correlated, whereas over condition (B) the two kinetics are linearly correlated. This last feature can be typically ascribed to defects acting as non-radiative recombination centers (NNRCs) in the active region [12]. The presence of defects in the active layers can promote the increment of the current needed to reach the threshold (Ith degradation) and worsen the LED-like emission when the device operates below threshold (OPsub degradation).…”

Section: Optical Degradationmentioning

confidence: 99%

Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits

Zenari

Buffolo

Fornasier

et al. 2023

Vertical-Cavity Surface-Emitting Lasers XXVII

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Laser diodes are of paramount importance for on-chip telecommunications applications, and a wide range of sensing devices that require near-infrared sources. In this work, the devices under test are vertical-cavity silicon-integrated lasers (VCSILs) designed for operation at 845 nm in photonic integrated circuits (PICs). We focus on the analysis of the degradation of the optical performance during aging. To investigate the reliability of the devices, we carried out several stress tests at constant current, ranging from 3.5 mA to 4.5 mA representing a highly accelerated stress condition. We observed two different degradation modes. In the first part of the experiments, the samples exhibited a worsening of the threshold current, but the sub-threshold emission was unaffected by degradation. We associated this behavior to the diffusion of impurities that, from the p-contact, were crossing the upper mirror implying a worsening of the DBR optical absorption. In the second stage of the stress test, the devices showed a higher degradation rate of the threshold current, whose variation was found to be linearly correlated to the worsening of the sub-threshold emission. We related this second degradation mode to the migration of the same impurities degrading the top DBR that, when reaching the active region of the laser, induced an increase in the non-radiative recombination rate. In addition to that, we related the two degradation modes to the change in series resistance, which was ascribed to the resistivity increment of the top DBR first and of oxide aperture afterwards.

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“…Nowadays, the literature reports that the optical medium has greater bandwidth than the electrical medium, absence of the Joule effect and it is electromagnetic interference-free [5], [6]. Optical devices can be fabricated with standard microelectronic processes in a heterogeneous or monolithic substrate [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 μm technology

Yauri,

Gamero,

Alayo

2023

IJEECS

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<p>Currently, the relevance of optical devices has increased due to the physical limitations of the electrical transmission medium and the proximity of the limit of Moore's Law. Furthermore, the fabrication of optical devices on monolithic silicon substrates has gained importance in recent years thanks to manufacturing technologies in the microelectronics industry. For this reason, this paper aims to carry out the electrical characterization of an optical device manufactured with commercial austria micro syste m technology of complementary metal oxide semiconductors of 0.35 μm. The methodology consists of implementing an optical device, with an incandescent optical source called a microlamp, a waveguide and a photodiode. The microlamp was projected between two m etal layers connected by tungsten vias that act as filaments covered by SiO 2 dielectric to prevent oxidation. The results of the electrical characterization of the optical device show that the microlamp reaches a maximum current of 48 mA and stops working at higher currents. The waveguide was designed with a SiO 2 core and it was discovered that the TiN layers were found to be part of the waveguide causing it to behave as an emitter in the 2.5 - 5 <em>µ</em>m region.</p>

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Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

Cited by 10 publications

References 8 publications

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits

Characterization of the electrical properties of an optical device manufactured with CMOS 0.35 μm technology

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