Degradation of a-IGZO Thin-Film Transistors Under Negative Bias and Illumination Stress in the Time Span of a Few Seconds

Tai, Ya‐Hsiang; Liu, Han–Wen; Chan, Po-Chun; Chiu, Shih-Hung

doi:10.1109/led.2018.2821170

Cited by 17 publications

(3 citation statements)

References 22 publications

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“…The word pool implies that V O in a-IGZO are so many and various that they can have different reaction rates distributing over a very wide range. The fitting parameters had been well discussed in detail in our previous reports [20]- [23], [31]. We found the number of reacting V O was dependent on the light intensity.…”

Section: A Proposing a Vacancy Pool Modelmentioning

confidence: 52%

The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Tai

Liu

Chan

2019

IEEE J. Electron Devices Soc.

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In this paper, the reaction rate of oxygen vacancy (V O ) by the derivatives of threshold voltage (Vth) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named V O pool is proposed. The proposed model can more universally describe the characteristic of V O reacting to the light and its degradation behavior under various kinds of stress condition.INDEX TERMS Amorphous indium gallium zinc oxide (a-IGZO), thin-film transistors (TFTs), reaction rate, illumination effect, multiple-pulse illumination, response time, oxygen vacancy.

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Section: A Proposing a Vacancy Pool Modelmentioning

confidence: 52%

The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Tai

Liu

Chan

2019

IEEE J. Electron Devices Soc.

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“…This rapid degradation of V TH has also been observed in previous studies, where the V TH shifts toward negative gate bias direction rather than positive gate bias direction. [12] The degradations in V TH , V FB , and SS can be recovered, but the corresponding recovery also behaves differently. One can notice from Fig.…”

Section: Nbs and Nbis Degradationmentioning

confidence: 99%

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress*

Guo¹,

Zhang²,

Wang³

et al. 2021

Chinese Phys. B

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A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress (NBS) is observed for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), which can recover in a short time. After comparing with the degradation phenomena under negative bias illumination stress (NBIS), positive bias stress (PBS), and positive bias illumination stress (PBIS), degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies ( V o + ) in addition to the commonly reported doubly charged oxygen vacancies ( V o 2 + ). Furthermore, the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of V o + under positive gate bias. The proposed degradation mechanisms are verified by TCAD simulation.

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“…The internal instability mechanisms still need to be investigated. Furthermore, light illumination is also an important factor that alters the device performance [6][7][8][9][10][11][12], because the TFT is inevitably affected by the backlight source in practical application. Recently, Kim et al proposed to widen the energy difference between subgap states and the conduction band (CB) minimum to effectively avoid the effect of illumination [13].…”

Section: Introductionmentioning

confidence: 99%

Origin of bias-stress and illumination instability in low-cost, wide-bandgap amorphous Si-doped tin oxide-based thin-film transistors

Liu¹,

Shiah²,

Guo³

et al. 2020

J. Phys. D: Appl. Phys.

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This article reports thin-film transistors (TFTs) with a low-cost, environmentally friendly and wide-bandgap amorphous Si-doped tin oxide (a-STO) semiconductor as the channel layer. To realize practical applications, a comprehensive investigation of a-STO TFTs was performed. The underlying carrier transport mechanism of a-STO TFTs analyzed via the temperature dependence of transfer characteristics is trap-limited conduction. The degradation of the a-STO TFTs induced by bias stress and light illumination is discussed. The results may not only provide a deeper understanding of the electrical properties of a-STO TFTs but also form a fundamental perspective for further improvement of the performance of similar devices.

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Degradation of a-IGZO Thin-Film Transistors Under Negative Bias and Illumination Stress in the Time Span of a Few Seconds

Cited by 17 publications

References 22 publications

The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress*

Origin of bias-stress and illumination instability in low-cost, wide-bandgap amorphous Si-doped tin oxide-based thin-film transistors

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