Origin of bias-stress and illumination instability in low-cost, wide-bandgap amorphous Si-doped tin oxide-based thin-film transistors

Abstract

This article reports thin-film transistors (TFTs) with a low-cost, environmentally friendly and wide-bandgap amorphous Si-doped tin oxide (a-STO) semiconductor as the channel layer. To realize practical applications, a comprehensive investigation of a-STO TFTs was performed. The underlying carrier transport mechanism of a-STO TFTs analyzed via the temperature dependence of transfer characteristics is trap-limited conduction. The degradation of the a-STO TFTs induced by bias stress and light illumination is discussed. The results may not only provide a deeper understanding of the electrical properties of a-STO TFTs but also form a fundamental perspective for further improvement of the performance of similar devices.

Effects of Laser Treatment of Terbium-Doped Indium Oxide Thin Films and Transistors

“…It can be seen that the untreated films have a lower density and a higher thickness due to the presence of more impurities and the lack of condensation reaction to form the metal oxide structure. Compared to the untreated sample, the density of the films treated with 20 pulses and 130 mJ/cm 2 laser increased (3.53 vs. 3.5952 g/cm 3 ) and the thickness decreased (50.55 vs. 46.43 nm). The film thickness continued to decrease and the density increased with increasing laser energy density.…”

“…The film thickness continued to decrease and the density increased with increasing laser energy density. At the laser energy density of 250 mJ/cm 2 , the thickness decreased to 41.13 nm and the density increased to 3.8 g/cm 3 . This can be a ributed to the removal of impurities and densification phenomenon within the film by the laser treatment, as shown by the FTIR test results, which significantly removed the residual solvent molecules and nitrate ions within the film, thus removing impurities.…”

“…People are increasingly demanding features of display devices, such as high resolution, thin, flexible, transparent and rich in color. The metal oxide thin film transistor (MOTFT) has the advantages of high mobility (1–100 cm 2 /V·s) and good film uniformity [ 1 , 2 , 3 , 4 ]. It has become a strong competitor in the display backplane industry represented by an active matrix liquid crystal display and active matrix organic light-emitting diode.…”

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

“…People continue to have higher requirements for the characteristics of display devices, such as high resolution, thin, flexible, transparent, rich color and so on. Metal oxide semiconductor thin film transistor (MOS-TFT) has the advantages of high mobility (1-100 cm 2 /Vs) and good film uniformity [1][2][3][4][5]. It has become a strong competitor in the display backplane industry represented by active matrix liquid crystal display and active matrix organic light emitting diode.…”