Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells

Adey, J; Jones, R.; Palmer, D.W.; Briddon, P.R.; Öberg, Sven

doi:10.1103/physrevlett.93.055504

Cited by 81 publications

(38 citation statements)

References 24 publications

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“…Hence, a staggered configuration has also been proposed for the B s O 2i complex as a possible core structure. 15 Interestingly, very recent density-functional calculations 20 , the latter one being equivalent to the structure proposed before. 15 The calculations also showed that B s O 2i sq is the more stable configuration in the single positive charge state, while B s O 2i st is the more stable when neutral.…”

Section: Boron-oxygen-related Degradationmentioning

confidence: 86%

“…15 The calculations also showed that B s O 2i sq is the more stable configuration in the single positive charge state, while B s O 2i st is the more stable when neutral. 20 The ionization energies of the B s O 2i defect were calculated using the Marker Method. 20 These calculations revealed that B s O 2i sq has in fact a (0/+) donor level in the upper half of the silicon band gap approximately between E C −0.1 eV and E C −0.3 eV, if the structure is confined to this geometry as is predicted for temperatures around room temperature, suggesting that B s O 2i sq+ is the most likely candidate for the center responsible for the solar cell degradation.…”

Section: Boron-oxygen-related Degradationmentioning

confidence: 99%

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Electronically stimulated degradation of silicon solar cells

et al. 2006

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Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.

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Section: Boron-oxygen-related Degradationmentioning

confidence: 86%

Section: Boron-oxygen-related Degradationmentioning

confidence: 99%

Electronically stimulated degradation of silicon solar cells

et al. 2006

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“…2 and 8) or such complex is electrically inactive. 9 In Ga and B co-doped Cz-Si samples of the same total doping 16 cm À3 , Arivanandhan et al 10 measured lower lifetime after degradation in samples containing higher [B]. This result might lead one to question Voronkov and Falster's model which would expect, in Si containing B, the amplitude of the degradation to be proportional to p 0 and independent on [B].…”

mentioning

confidence: 93%

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Forster

Fourmond

Rougieux

et al. 2012

Applied Physics Letters

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We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observed in boron and phosphorus compensated silicon, we find a proportionality to the boron concentration. This indicates the participation of substitutional, rather than interstitial, boron in the defect complex. The measured defect formation rate constant is proportional to the hole density squared, which gives credit to latent defect models against defect reactions limited by the diffusion and trapping of oxygen dimers by boron atoms.

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“…[86][87][88][89] The diffusion of oxygen is mainly via O i and O 2i species as described in a recent DFT study by Timerkaeva et al 88 Regarding the O i at the ground state configuration, the O atom is bonded to two neighbouring Si atoms (Si 1 and Si 2 , refer to Fig. 4(a)) and the remaining valence electrons form two lone pairs on the O atom.…”

Section: Oxygen Diffusion Processes In Simentioning

confidence: 96%

Oxygen defect processes in silicon and silicon germanium

Chroneos

Sgourou

Londos

et al. 2015

Applied Physics Reviews

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Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

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Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells

Cited by 81 publications

References 24 publications

Electronically stimulated degradation of silicon solar cells

Electronically stimulated degradation of silicon solar cells

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

Oxygen defect processes in silicon and silicon germanium

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