Degradation of GaAs injection devices

Steiner, Sandra; Anderson, R. L.

doi:10.1016/0038-1101(68)90139-1

Cited by 31 publications

(5 citation statements)

References 15 publications

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“…But the current range over which the I-I/ characteristic is taken is low compared to the operating current of 2 A and the degradation of light output at 2 A is probably accounted for by an increase in the non-radiative component of the diffusion current as discussed in the introduction. Similar results were obtained by Steiner and Anderson (1968).…”

Section: High-radianse High-current-density Lampssupporting

confidence: 90%

“…Degradation can also take place when recombination is induced by optical pumping (Johnston and Miller 1973). The first record of the effect of optical pumping was noted during operation of tunnel diodes, the electrical characteristics of which degrade in a very similar fashion to those of optical devices (Steiner and Anderson 1968).…”

Section: Introductionmentioning

confidence: 99%

“…Figure 2 is taken from the work of Steiner and Anderson (1968) who tried to break down the I-V characteristics of their diodes into the various components of current. For doping levels of Nd=(1-5) x l0ls ~m -~ two components, i.e.…”

Section: Introductionmentioning

confidence: 99%

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The degradation of semiconductor light-emitting diodes, high-radiance lamps and lasers

Ohara¹

1977

J. Phys. D: Appl. Phys.

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Detailed experimental results and suggested theories on the degradation of light-emitting diodes (LEDS), high-radiance lamps and semiconductor lasers are reviewed. Experimental results on LEDS show that a number of light-degrading mechanisms can operate which probably include migration of impurities or point defects. Dislocations when present in high densities also give rise to degradation in LEDS. Extrapolated lives to half intensity of between lo5 and lo7 h have been commonly projected for these devices, and this rather slow rate of degradation appears to have been achieved by minimizing impurity contamination, reducing strain and minimizing the dislocation density in the carrier recombination region.Relatively long lives have also been predicted for high-radiance, high-currentdensity lamps from thermally accelerated life-tests. Dark-spot and dark-line defects have been observed in these lamps, and samples which develop this structure have to be rejected at early stages of testing in order that long lives can be guaranteed. In one case, the dark structure has been shown to result from the formation of tangles of dislocations generated during fabrication. High-current-density lamps which are free from dark structure also have projected lives of between 105 and 107 h.Generally, laser diodes can now be made which have lives in excess of lO4h. As with high radiance lamps, however, if dislocations are present in the active region, then the useful life of the device is reduced to hundreds of hours or less. Considerable care must therefore be exercised in the fabrication and in layer growth procedures to prevent the introduction of dislocations in the active region. Details of the dark structure resulting from dislocations is reviewed and consideration is given to the remaining causes of degradation in lasers.

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Section: High-radianse High-current-density Lampssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

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The degradation of semiconductor light-emitting diodes, high-radiance lamps and lasers

Ohara¹

1977

J. Phys. D: Appl. Phys.

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“…The object is to establish the nature of the gradual degradation process in GaAs injection lasers. While degradation in GaAs incoherent electroluminescent diodes has been investigated in detail [3], [4], laser degradation has received far less attention. In this paper we will investigate the following questions.…”

Section: Introductionmentioning

confidence: 99%

“…The probability of displacing an atom reported in[4] is erroneous due to the authors' omission of the diffusion length in the continuity equation in Appendix A. Assuming a cm diffusion length, then the results of [4] indicate a probability of in their EL diodes.…”

mentioning

confidence: 99%