The oxide and interface properties of a 1200 Å anodic film on Hg0.8Cd0.2Te were studied by means of x-ray photoelectron spectroscopy (XPS) and capacitance voltage (C–V)a measurements on a metal–insulator–semiconductor (MIS) capacitance. The XPS results showed that the elemental composition of the anodic oxide is 59% O, 24% Te, 14% Cd, and 3% Hg. With the support of other experimental evidence, the anodic oxide was assigned a heterogeneous oxide of 58% CdTeO3, 19% TeO2, and 13% HgTeO3. A depth profile of the interface region, performed with the aid of Ar+ sputtering, revealed a significant depletion of Hg in the semiconductor side. These results are inconsistent with the recent model of the same oxide/semiconductor system, proposed by Nemirovksy and Finkman. The C–V curves from MIS measurements exhibited a large hysteresis indicative of a high concentration of positive–charge traps in the oxide, and characteristics indicative of a high density of surface states in the semiconductor surface region. A tentative model of the oxide and interface properties of this system was derived by combining the results of these two analyses. In addition, effects of the electron beam and of ion sputtering on this material are discussed.

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Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation J.Summary Abstract: MBE GaAs regrowth with clean interfaces by arsenic passivation J. Vac. Sci. Technol. B 3, 560 (1985); 10.1116/1.583178Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs (100)

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Steady-state measurements were made of the optical emission and electrical properties of amphoteric Si-doped GaAs diodes. The width of the emitting region of these diodes is explained in terms of a theory involving the drift of electrons across a semi-insulating p-region. At low currents radiative recombination occurs in the p-region within a diffusion length of the junction. However, at high currents a considerable number of injected electrons drift across the p-region and light emanates from the entire p-region. The theory is consistent with the observed I-V characteristics and also with the spreading of the emission into the p-region.